BUV27F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BUV27F BUV27AF BUV27F VCEO Collector-Emitter Voltage BUV27AF VEBO IC ICM IB B BUV27F/AF VALUE 240 UNIT VCES Collector-Emitter Voltage VBE= 0 V 300 120 V 150 5 15 20 4 6 18 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 7.0 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV27F IC= 0.2A ;IB= 0; L= 25mH B BUV27F/AF CONDITIONS MIN 120 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 150 BUV27AF BUV27F BUV27AF BUV27F BUV27AF ICEX ICES IEBO Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC= 8A; IB= 0.8A B VCE(sat) Collector-Emitter Saturation Voltage 1.5 V 1.0 2.0 V 2.0 1.0 3.0 1.0 mA mA mA IC= 7A; IB= 0.7A B VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A B IC= 7A; IB= 0.7A B VCE=VCESmax;VBE=-1.5V,TJ=125℃ VCE=VCESmax;VBE=0,TJ=125℃ VEB= 5V; IC=0 Switching Times; Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time For BUV27AF IC= 7A; IB1= 0.7A; IB2= -1.4A 0.4 0.5 0.12 0.8 1.2 0.4 μs μs μs For BUV27F IC= 8A; IB1= 0.8A; IB2= -1.6A isc Website：www.iscsemi.cn 2