BUV27G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Features www.onsemi.com • Low Collection Emitter Saturation Voltage • Fast Switching Speed • These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 120 Vdc Collector−Emitter Breakdown Voltage VCBO 240 Vdc Emitter−Base Voltage VEBO 7.0 Vdc IC 12 Adc Collector Current − Continuous Collector Current − Peak (Note 1) ICM 20 Adc Base Current IB 4.0 Adc Total Device Dissipation (TC = 25°C) Derate above 25°C PD 70 0.56 W W/°C Operating and Storage Temperature TJ, Tstg − 65 to 150 °C SCHEMATIC COLLECTOR 2,4 1 BASE 3 EMITTER Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. MARKING DIAGRAM 4 THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol Max Unit RqJC RqJA 1.78 62.5 °C/W TO−220 CASE 221A STYLE 1 1 2 BUV27G AYWW 3 1 BUV27 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUV27G Package Shipping TO−220 (Pb−Free) 50 per Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 5 1 Publication Order Number: BUV27/D BUV27 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Max Unit ICER Collector Cut−off Current (RBE = 50 W) VCE = 240 V, TC = 125°C 3.0 mA ICEX Collector Cut−off Current VCE = 240 V, VBE = −1.5 V, TC = 125°C 1.0 mA IEBO Emitter Cut−off Current (IC = 0) VBE = 5 V 1.0 mA Collector−Emitter Sustaining Voltage IC = 0.2 A, L = 25 mH 120 Emitter−Base Voltage (IC = 0) IE = 50 mA 7.0 VCE(sat) (Note 2) Collector−Emitter Saturation Voltage VBE(sat) (Note 2) Base−Emitter Saturation Voltage VCEO(sus) VEBO Parameter Test Conditions Min Typ V 30 V IC = 4 A, IB = 0.4 A IC = 8 A, IB = 0.8 A 0.7 1.5 V IC = 8 A, IB = 0.8 A 2.0 V 0.8 1.2 0.25 ms ms ms Resistive Load ton ts tf Turn−on Time Storage Time Fall Time VCC = 90 V, IC = 8 A VBE = −6 V, IB1 = 0.8 A RBB = 3.75 W 0.4 0.5 0.12 VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = −5 V LB = 1 mH VCC = 90 V, IC = 8 A IB1 = 0.8 A, VBE = −5 V LB = 1 mH, TJ = 125°C 0.6 0.04 Inductive Load ts tf Storage Time Fall Time ts tf Storage Time Fall Time ms 2.0 0.15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2% www.onsemi.com 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BUV27 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 ZqJC(t) = r(t) RqJC RqJC = 1.785C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.07 0.05 0.02 0.03 0.02 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k ,ICCOLLECTOR CURRENT (AMP) Figure 1. Thermal Response 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 2 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 5 ms dc 1.0 0.02 2.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25°C 5.0 10 50 20 120 150 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Forward Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) 0.1 TA TC 3.0 60 2.0 40 1.0 20 0 0 TC TA 0 20 40 80 60 100 120 T, TEMPERATURE (°C) Figure 3. Power Derating www.onsemi.com 3 140 160 BUV27 1000 1.3 VBE(ON), BASE−EMITTER ON VOLTAGE (V) TA = 150°C TA = 25°C TA = −55°C 100 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 10 0.1 1 10 1.1 1 0.9 TA = −55°C 0.8 TA = 25°C 0.7 0.6 TA = 150°C 0.5 0.4 0.3 0.1 100 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. DC Current Gain vs. Collector Current Figure 5. Base−Emitter Turn−ON Voltage vs. Collector Current 1 1.3 IC/IB = 10 1.2 1.1 1 0.9 TA = −55°C TA = 25°C 0.8 0.7 TA = 150°C 0.6 0.5 0.4 0.3 0.1 1 10 IC/IB = 10 TA = 150°C 0.1 TA = 25°C TA = −55°C 0.01 0.1 100 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base−Emitter Saturation Voltage vs. Collector Current Figure 7. Collector−Emitter Saturation Voltage vs. Collector Current 80 ftau, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 10k C, CAPACITANCE (pF) VCE = 2 V 1.2 VCE(ON), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 2 V Cibo 1k Cobo 100 10 0.1 1 10 VCE = 1 V TA = 25°C 70 60 50 40 30 20 10 0 0.1 100 1 10 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 8. Capacitance Figure 9. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 4 BUV27 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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