DMA10IM1600PZ-TRL

DMA10IM1600PZ Standard Rectifier VRRM = 1600 V I FAV = 10 A VF = 1.21 V Single Diode Part number DMA10IM1600PZ Marking on Product: DMA10IM1600PZ Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA10IM1600PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1700 V 1600 V TVJ = 25°C 10 µA VR = 1600 V TVJ = 150°C 0.2 mA TVJ = 25°C 1.26 V 1.53 V 1.21 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150 °C 1.57 V T VJ = 175 °C 10 A TVJ = 175 °C 0.82 V 37 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1600 V rectangular Ptot min. 1.5 K/W K/W 0.25 TC = 25°C 100 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 70 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 4 pF 20190212a DMA10IM1600PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 25 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking D M A 10 IM 1600 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number DMA10IM1600PZ-TRL DMA10IM1600PZ-TUB Similar Part DMA10I1600PA Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 517581 525333 Voltage class 1600 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 R0 max slope resistance * 34 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Marking on Product DMA10IM1600PZ DMA10IM1600PZ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA10IM1600PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DMA10IM1600PZ Rectifier 20 100 102 50 Hz, 80%VRRM VR = 0 V 15 TVJ = 45°C 80 IF TVJ = 45°C IFSM It [A] [A s] 2 10 [A] 2 TVJ = 150°C 60 5 TVJ = 150°C TVJ = 25°C TVJ = 125°C TVJ = 150°C 0 0.5 1.0 1.5 40 0.001 2.0 101 0.01 VF [V] 0.1 1 1 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 28 18 RthHA = 16 12 10 [W] 8 DC = 1 0.5 0.4 0.33 0.17 0.08 24 4 K/W 8 K/W 10 K/W 12 K/W 16 K/W 20 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 14 Ptot 2 t [s] 20 IF(AV)M 16 [A] 12 6 8 4 4 2 0 0 0 2 4 6 8 10 12 0 50 IF(AV)M [A] 100 150 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 i Rthi (K/W) ti (s) 1 0.155 0.0005 2 0.332 0.0095 3 0.713 0.17 4 0.3 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a