DMA30IM1600PZ-TRL

DMA30IM1600PZ Standard Rectifier VRRM = 1600 V I FAV = 30 A VF = 1.26 V Single Diode Part number DMA30IM1600PZ Marking on Product: DMA30IM1600PZ Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● High creepage distance between terminals Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DMA30IM1600PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 1700 V 1600 V TVJ = 25°C 40 µA VR = 1600 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.29 V 1.60 V 1.26 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140 °C 1.65 V T VJ = 175 °C 30 A TVJ = 175 °C 0.82 V 14.1 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 1600 V rectangular Ptot min. 0.7 K/W K/W 0.25 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45°C 450 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 440 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 325 A²s 315 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20190212b DMA30IM1600PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking D M A 30 IM 1600 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number DMA30IM1600PZ-TRL DMA30IM1600PZ-TUB Equivalent Circuits for Simulation I V0 R0 Marking on Product DMA30IM1600PZ DMA30IM1600PZ * on die level Delivery Mode Tape & Reel Tube Code No. 515813 525354 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.82 V R0 max slope resistance * 10.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DMA30IM1600PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 4 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b DMA30IM1600PZ Rectifier 60 250 500 50 Hz, 80% VRRM 50 VR = 0 V 400 40 200 IFSM IF 300 TVJ = 45°C 30 TVJ = 45°C 2 It [A] [A] 20 TVJ = 125°C 200 150 TVJ = 150°C 2 150°C [A s] TVJ = 150°C 100 10 TVJ = 25°C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 0.001 1.8 0 0.01 0.1 Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 91 0 t [ms] 2 Fig. 2 Surge overload current 50 RthHA: 0.6 K/W 0.8 K/W 1 K/W 2 K/W 4 K/W 8 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 30 2 1 t [s] VF [V] 40 1 Fig. 3 I t versus time per diode 40 30 IF(AV)M DC = 1 0.5 0.4 0.33 0.17 0.08 20 [A] [W] 20 10 10 0 0 0 10 20 30 0 50 100 150 200 0 50 Tamb [°C] IF(AV)M [A] 100 150 200 TC [°C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 0.8 0.6 ZthJC Constants for ZthJC calculation: i 0.4 [K/W] 0.2 0.0 1 10 100 1000 Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212b