DMA150YC1600NA

DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220d DMA150YC1600NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 IR reverse current VR = 1600 V TVJ = 25°C 100 µA VR = 1600 V TVJ = 150°C 1.5 mA IF = TVJ = 25°C 1.21 V 1.62 V 1.16 V VF forward voltage drop 50 A min. typ. I F = 150 A IF = TVJ = 125 °C 50 A I F = 150 A I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95 °C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved V 1.69 V T VJ = 150 °C 150 A TVJ = 150 °C 0.87 V 5.6 mΩ d=⅓ for power loss calculation only Ptot max. Unit 1700 V 0.6 K/W K/W 0.1 TC = 25°C 165 W t = 10 ms; (50 Hz), sine TVJ = 45°C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 680 A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 A t = 10 ms; (50 Hz), sine TVJ = 45°C 3.20 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 3.12 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 2.31 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 2.25 kA²s 25 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20191220d DMA150YC1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Part description Part Number UL D M A 150 YC 1600 NA = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Half 3~ Bridge, Common Cathode Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DMA150YC1600NA Similar Part DMA150YA1600NA Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product DMA150YC1600NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 509174 Voltage class 1600 T VJ = 150°C Rectifier V 0 max threshold voltage 0.87 V R0 max slope resistance * 4.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20191220d DMA150YC1600NA Outlines SOT-227B (minibloc) 1 3 2 4 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220d DMA150YC1600NA Rectifier 200 700 150 600 104 50 Hz, 80%VRRM VR = 0 V TVJ = 45°C IFSM IF 100 I2t TVJ = 45°C 500 [A] [A] 50 0 0.5 1.0 1.5 [A2s] TVJ = 150°C 400 TVJ = 150°C TVJ = 125°C TVJ = 25°C 102 300 0.001 2.0 TVJ = 150°C 103 VF [V] Fig. 1 Forward current versus voltage drop per diode 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current vs. time per diode 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode 150 RthHA = 80 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 100 IF(AV)M [A] [W] 50 20 0 0 0 10 20 30 40 50 60 0 IF(AV)M [A] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TC [°C] Tamb [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.7 0.6 0.5 Constants for ZthJC calculation: ZthJC i 0.4 Rthi (K/W) ti (s) [K/W] 1 0.0240 0.01000 0.3 2 0.0160 0.00001 3 0.0500 0.00500 4 0.1800 0.02300 5 0.3300 0.22000 0.2 0.1 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191220d