IXFK170N10P

IXFH170N10P IXFK170N10P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 100V = 170A Ω ≤ 9mΩ ≤ 150ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 IL(RMS) TC = 25°C External Lead Current Limit 170 160 A A IDM TC = 25°C, Pulse Width Limited by TJM 350 A IA TC = 25°C 60 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 715 W TJ -55 to +175 °C TJM +175 °C Tstg -55 to +175 °C TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque Weight TO-247 TO-264 1.13/10 Nm/lb.in. 6 10 g g G D Tab S TO-264 (IXFK) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z z International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 5.0 25 μA VGS = 10V, ID = 0.5 • ID25, Note 1 VGS = 15V, ID = 350A © 2010 IXYS CORPORATION, All Rights Reserved 500 μA 7 z z V ±100 nA TJ = 150°C RDS(on) z 9 mΩ mΩ High Power Density Easy to Mount Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls DS99380F(01/10) IXFH170N10P IXFK170N10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 3.3Ω (External) Qg(on) Qgs 72 S 6000 pF 2340 pF 730 pF 35 ns 50 ns 90 ns 33 ns 198 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd nC 39 nC 107 nC RthJC RthCS TO-247 (IXFH) Outline 0.21 °C/W (TO-247) (TO-264) 0.21 0.15 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 350 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 25A, -di/dt = 100A/μs, VR = 50V, VGS = 0V 150 ns A μC 8.0 0.6 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 AA ( IXFK) Outline Back Side Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 1 = 2 = 3 = Tab Gate Drain Source = Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH170N10P IXFK170N10P Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 320 180 VGS = 10V VGS = 10V 160 280 9V 240 120 8V ID - Amperes ID - Amperes 140 100 80 7V 9V 200 160 8V 120 7V 60 80 40 6V 6V 40 20 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 180 2.4 VGS = 10V 160 2.2 9V 2.0 8V 120 R DS(on) - Normalized ID - Amperes 140 VGS = 10V 100 7V 80 60 6V 40 1.8 I D = 170A 1.6 I D = 85A 1.4 1.2 1.0 20 0.8 5V 0 0.6 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 180 3.0 VGS = 10V 160 15V - - - - - 2.6 External Lead Current Limit 2.2 TJ = 175ºC ID - Amperes R DS(on) - Normalized 140 1.8 120 100 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 IXFH170N10P IXFK170N10P Fig. 8. Transconductance Fig. 7. Input Admittance 120 320 TJ = - 40ºC 280 g f s - Siemens TJ = - 40ºC 25ºC 150ºC 240 ID - Amperes 100 200 160 120 80 25ºC 60 150ºC 40 80 20 40 0 0 3 4 5 6 7 8 9 0 10 40 80 120 Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 240 280 320 Fig. 10. Gate Charge 10 350 VDS = 50V 9 300 I D = 85A 8 TJ = 25ºC I G = 10mA 7 VGS - Volts 250 IS - Amperes 160 ID - Amperes VGS - Volts TJ = 150ºC 200 150 6 5 4 3 100 2 50 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 20 40 60 VSD - Volts Fig. 11. Capacitance 100 120 140 160 180 200 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz 1ms RDS(on) Limit 100µs 10ms DC 10,000 Ciss 1,000 Coss 100 ID - Amperes Capacitance - PicoFarads 80 QG - NanoCoulombs 10 TJ = 175ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 VDS - Volts 100 IXFH170N10P IXFK170N10P Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170N10P(8S)01-07-10-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.