IXFK170N20P

PolarTM HiperFETTM Power MOSFET IXFK170N20P IXFX170N20P VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 170 A ILRMS IDM Lead Current Limit TC = 25C, Pulse Width Limited by TJM 160 400 A A IA TC = 25C 85 A EAS TC = 25C 4 J dv/dt IS  IDM, VDD  VDSS, TJ  175C 20 V/ns PD TC = 25C 1250 W Maximum Ratings -55 ... +175 175 -55 ... +175 C C C TJ TJM Tstg TSOLD 200V 170A  14m TO-264 (IXFK) Symbol L = =  Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Force (PLUS247) Mounting Torque (TO-264) Weight PLUS247 TO-264 300 260 °C °C 20..120/4.5..27 1.13/10 N/lb Nm/lb.in 6 10 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features        Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Applications V  4.5 V 200 nA TJ = 150C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved 50 A 1 mA 14 m Easy to Mount Space Savings       DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives DC Choppers High Speed Power Switching Applications DS100008A(03/14) IXFK170N20P IXFX170N20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 45 VDS = 10V, ID = 60A, Note 1 75 S 11.4 nF 2440 pF 70 pF 40 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) Resistive Switching Times tr td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 50 ns ns RG = 1 (External) 14 ns 185 nC 80 nC 60 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 510 A VSD IF = 85A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 85A, -di/dt = 150A/s Note 1.6 20 VR = 100V, VGS = 0V TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline 200 ns C A 1: Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 7,157,338B2 IXFK170N20P IXFX170N20P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 300 180 VGS = 15V 10V 9V 160 9V 240 140 210 120 I D - Amperes I D - Amperes VGS = 15V 10V 270 8V 100 80 60 7V 180 8V 150 120 7V 90 40 60 20 6V 30 0 6V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 VDS - Volts 180 12 14 3.4 VGS = 15V 10V 9V 160 RDS(on) - Normalized 8V 120 100 7V 80 60 6V 2.6 I D = 170A 2.2 I D = 85A 1.8 1.4 1.0 40 20 VGS = 10V 3.0 140 I D - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 0.6 5V 0 0.2 0 1 2 3 4 5 6 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.8 180 VGS = 10V 3.4 160 15V - - - - External Lead Current Limit 140 TJ = 175ºC 3.0 120 I D - Amperes RDS(on) - Normalized 8 VDS - Volts 2.6 2.2 1.8 100 80 60 1.4 40 1.0 20 TJ = 25ºC 0 0.6 0 50 100 150 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 IXFK170N20P IXFX170N20P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 TJ = - 40ºC 160 120 TJ = 150ºC 25ºC - 40ºC 120 100 g f s - Siemens I D - Amperes 140 100 80 25ºC 80 150ºC 60 60 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 20 40 60 100 120 140 160 180 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 10 VDS = 100V 9 300 I D = 85A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 80 I D - Amperes VGS - Volts 200 150 6 5 4 TJ = 150ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 VSD - Volts Fig. 11. Capacitance 150 200 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 RDS(on) Limit Ciss 10,000 25µs 100µs 100 I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs C oss 1,000 100 1ms 10 10ms 1 TJ = 175ºC C rss f = 1 MHz 100ms DC TC = 25ºC Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK170N20P IXFX170N20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170N20P(93)7-16-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.