IXFK170N20T

Advance Technical Information IXFK170N20T IXFX170N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 170A Ω 11mΩ 200ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 200 200 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 170 160 470 A A A IA EAS TC = 25°C TC = 25°C 40 3 A J PD TC = 25°C 1150 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G (TAB) G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 ± 200 z z z z z TJ = 150°C Easy to Mount Space Savings High Power Density V Applications V z 50 μA 3 mA 11 mΩ z z z z z z z © 2009 IXYS CORPORATION, All rights reserved International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z nA D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. (TAB) S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100131(03/09) IXFK170N20T IXFX170N20T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 85 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 19.6 nF pF 135 pF 33 ns 28 ns 80 ns 22 ns 265 nC 86 nC 67 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 140 1870 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.13 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 680 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr QRM IRM 200 IF = 80A, -di/dt = 100A/μs VR = 75V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 9.80 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.59 Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK170N20T IXFX170N20T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 180 VGS = 10V 8V 7V 160 VGS = 10V 8V 300 140 100 ID - Amperes ID - Amperes 250 7V 120 6V 80 200 150 6V 60 100 40 50 5V 20 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 180 7 8 9 10 3.0 VGS = 10V 8V 7V 160 2.8 VGS = 10V 2.6 140 2.4 RDS(on) - Normalized ID - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 6V 120 100 80 60 5V I D = 170A 2.2 2.0 I D = 85A 1.8 1.6 1.4 1.2 1.0 40 0.8 20 0.6 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 3.8 External Lead Current Limit VGS = 10V 3.4 160 140 TJ = 175ºC 3.0 ID - Amperes RDS(on) - Normalized 5 VDS - Volts VDS - Volts 2.6 2.2 1.8 120 100 80 60 1.4 40 1.0 20 TJ = 25ºC 0 0.6 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade IXYS REF:F_170N20T(9W)3-23-09 IXFK170N20T IXFX170N20T Fig. 7. Input Admittance Fig. 8. Transconductance 160 280 140 240 TJ = - 40ºC 200 g f s - Siemens ID - Amperes 120 100 TJ = 150ºC 25ºC -40ºC 80 60 25ºC 160 150ºC 120 80 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 Fig. 10. Gate Charge 10 350 VDS = 100V 9 I D = 85A 300 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 6 5 4 3 100 TJ = 150ºC 2 TJ = 25ºC 50 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 40 VSD - Volts 120 160 200 240 280 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz RDS(on) Limit Ciss 25µs 100 10,000 ID - Amperes Capacitance - PicoFarads 80 Coss 100µs 10 1,000 1ms TJ = 175ºC TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK170N20T IXFX170N20T Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th )J C - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All rights reserved IXYS REF:F_170N20T(9W)3-23-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.