2SC2714

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES z Small reverse Transfer Capacitance:Cre=0.7pF(typ.) z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 20 mA PC Collector Power Dissipation 100 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-+125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 4 V Collector cut-off current ICBO VCB=18V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 μA DC current gain hFE VCE=6V,IC=1mA fT VCE=6V,IC=1mA 550 MHz pF Transition frequency 40 200 Reverse Transfer capacitance Cre VCB=6V,IE=0,f=1MHz 0.7 Noise figure NF VCE=6V,Ic=1mA,f=100MHZ 2.5 5 dB CLASSIFICATION OF hFE Rank Range Marking R O Y 40-80 70-140 100-200 QR QO QY A,May,2011