2SK3019

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-523 8Ω@4V 30 V 100mA 13Ω@2.5V   1. GATE 2. SOURCE 3. DRAIN FEATURE Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment APPLICATION Interfacing , Switching z z Easily designed drive circuits Easy to parallel z z Equivalent Circuit MARKING MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A RθJA Thermal Resistance, Junction-to-Ambient 833 ℃ /W PD Power Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature www.jscj-elec.com -55~+150 1 ℃ Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V Gate –Source leakage current IGSS VGS =±20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA Drain-Source On-Resistance RDS(on) Forward Transconductance gFS 30 V 0.8 1 µA ±2 µA 1.5 V VGS = 4V, ID =10mA 3.8 8 Ω VGS =2.5V,ID =1mA 6 13 Ω VDS =3V, ID = 10mA 20 mS Dynamic Characteristics* Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 13 pF 9 pF Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) tf * These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 200 Ta=25℃ 3.0V 4.0V Pulsed 200 VDS=3V Ta=25℃ 100 3.5V Pulsed ID 120 DRAIN CURRENT DRAIN CURRENT ID (mA) (mA) 160 2.5V 80 2.0V 40 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 10 3 VGS=1.5V 0 30 1 5 0 1 2 3 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID RDS(ON) —— VGS 4 (V) VGS 15 50 Ta=25℃ Ta=25℃ Pulsed Pulsed 30 RDS(ON) 10 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) ( Ω) 12 VGS=2.5V VGS=4V 3 9 6 ID=100mA 3 ID=50mA 1 3 1 30 10 DRAIN CURRENT ID 100 0 200 0 4 8 12 GATE TO SOURCE VOLTAGE (mA) 16 VGS 20 (V) IS —— VSD 200 SOURCE CURRENT IS (mA) 100 Ta=25℃ Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 0.8 1.0 VSD (V) 3 Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1  Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0 6277DSHDQG5HHO www.jscj-elec.com 5 Rev. - 1.0