2SK3019 KN

Plastic-Encapsulate MOSFETS N-channel MOSFET FEATURES  Low on-resistance  Fast switching speed  Low voltage drive makes this device ideal for portable equipment  Easily designed drive circuits  Easy to parallel 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Parameter VDS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A RθJA Value Units Symbol Thermal Resistance, Junction-to-Ambient V 833 ℃ /W W PD Power Dissipation 0.2 TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 ℃ ℃ MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V Gate –Source leakage current IGSS VGS =±20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA Drain-Source On-Resistance RDS(on) Forward Transconductance gFS 30 V 1 µA ±2 µA 1.5 V VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω VDS =3V, ID = 10mA 0.8 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time tr Turn-Off Delay Time Fall Time td(off) tf * These parameters have no way to verify. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics Transfer Characteristics Output Characteristics T =25℃ a Pulsed 200 200 3.0V 4.0V VDS =3V Ta=25℃ 100 3.5V Pulsed D 120 DRAIN CURRENT DRAIN CURRENT 2.5V 80 2.0V 40 0 30 I I D (mA) (mA) 160 3 VGS =1.5V 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE V DS 10 1 5 0 1 RDS(ON) —— ID RDS(ON) —— VGS Ta=25℃ Pulsed Pulsed ) 12 (Ω ) VGS =2.5V VGS =4V 3 R 10 9 ON-RESISTANCE DS(ON) (Ω DS(ON) 4 (V) Ta=25℃ 30 R 3 V GS 15 50 ON-RESISTANCE 2 GATE TO SOURCE VOLTAGE (V) 6 ID=100mA 3 ID=50mA 1 1 3 10 30 DRAIN CURRENT ID 100 0 200 (mA) 0 4 8 12 GATE TO SOURCE VOLTAGE 16 V GS IS —— VSD 200 SOURCE CURRENT I S (mA) 100 Ta=25℃ Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE VSD (V) 1.0 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. (V) 20 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.