CJ7252KDW

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs CJ7252KDW N Channel + P Channel Power MOSFET V(BR)DSS 60 V RDS(on)MAX ID SOT-363 5Ω@10V    5.3Ω@4.5V  0.34A   8Ω@-10V  -50 V 10Ω@-5V  -0.18A DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS(ON). FEATURE z High-Side Switching z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phones, Pagers MARKING: 75 Equivalent Circuit D1 6 G2 5 S2 4 1 2 3 S1 G1 D2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit N-Channel MOSFET VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V Drain Current -Continuous 0.34 A Drain Current - Pulsed(Note1) 1.36 A ID IDM P- Channel MOSFET VDS Drain-Source Voltage -50 V VGS Gate-Source Voltage ±20 V -0.18 A -0.7 A Power Dissipation 0.15 W Thermal Resistance from Junction to Ambient (Note2) 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ 260 ℃ ID IDM Drain Current -Continuous Drain Current – Pulsed (Note1) Power Dissipation, Temperature and Thermal Resistance PD RθJA TL Lead Temperature www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit N- Channel MOSFET Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =48V,VGS = 0V Gate-body leakage current IGSS Gate threshold voltage (note 3) VGS(th) Drain-source on-resistance (note 3) RDS(on) Diode forward voltage VSD 60 V 1 µA VGS =±20V, VDS = 0V ±10 µA VGS =±10V, VDS = 0V ±200 nA VGS =±5V, VDS = 0V ±100 nA 1.3 2.5 VGS =4.5V, ID =0.2A 1.1 5.3 Ω VGS =10V, ID =0.5A 0.9 VDS =VGS, ID =1mA 1 IS=0.3A, VGS = 0V V 5 Ω 1.5 V 40 pF 30 pF 10 pF DYNAMIC PARAMETERS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 4) Turn-on delay time Turn-off delay time Reverse recovery time td(on) VGS=10V,VDD=50V, 10 ns td(off) RL=250Ω,RGEN=50Ω, 15 ns trr Qr Recovered charge IS=300mA; dIS/dt=-100A/s;VGS=0V; VR=25V 30 ns 30 nC P- Channel MOSFET Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -50 V VDS =-50V,VGS = 0V -15 µA VDS =-25V,VGS = 0V -0.1 µA IGSS VGS =±20V, VDS = 0V ±10 nA Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =-250µA -1.62 -2 V Drain-source on-resistance (note 3) RDS(on) VGS =-5V, ID =-0.1A 5.5 10 Ω VGS =-10V, ID =-0.1A 4.1 8 Ω Forward transconductance (note 3) gFS Zero gate voltage drain current IDSS Gate-body leakage current VDS =-25V, ID =-0.1A -0.9 0.05 S DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 30 VDS =-5V,VGS =0V,f =1MHz Crss pF 10 pF 5 pF 2.5 ns 1 ns 16 ns 8 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VDD=-15V, RL=50Ω, ID =-2.5A tf SOURCE−DRAIN DIODE CHARACTERISTICS(note 4) IS -0.18 A Pulsed Current ISM -0.7 A Diode forward voltage (note 3) VDS -2.2 V Continuous Current IS=-0.13A, VGS = 0V Note: 1、 Surface mounted on FR-4 board using minimum pad size, 1oz copper 2、 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 、 Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2% 4、 These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics N-Channel MOS Output Characteristics Transfer Characteristics 1.2 1.2 Ta=25℃ VDS=3V VGS=5V,6V,7V,10V Pulsed Pulsed (A) (A) VGS=4V DRAIN CURRENT DRAIN CURRENT ID ID 0.8 VGS=3V 0.4 0.0 0.8 Ta=100℃ Ta=25℃ 0.4 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 2 4 6 GATE TO SOURCE VOLTAGE VGS 8 (V) RDS(ON) —— VGS RDS(ON) —— ID 10 5 Ta=25℃ Ta=25℃ Pulsed Pulsed 8 ( ) RDS(ON) 3 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( ) 4 2 VGS=4.5V ID=500mA 6 4 2 1 VGS=10V 0 0 0 300 600 900 DRAIN CURRENT ID 1200 1500 0 (mA) 2 4 8 VGS 10 (V) Threshold Voltage IS —— VSD 2 1 6 GATE TO SOURCE VOLTAGE 1.8 Pulsed VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.6 Ta=25℃ 0.01 1.4 ID=250uA 1.2 1.0 0.8 0.6 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 0.4 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) Rev. - 1.0 Typical Characteristics P-Channel MOS Output Characteristics Transfer Characteristics -0.6 -0.7 VDS=-10V VGS=-10V -0.6 VGS=-6V (A) -0.5 ID -0.4 DRAIN CURRENT DRAIN CURRENT ID (A) -0.5 VGS=-4.5V -0.3 VGS=-4V -0.2 VGS=-3V Ta=25℃ -0.4 Ta=100℃ -0.3 -0.2 -0.1 -0.1 VGS=-2.5V -0.0 -0.0 -0 -1 -2 -3 -4 -5 -6 -7 DRAIN TO SOURCE VOLTAGE -8 VDS -9 -10 -0 -1 (V) -2 -3 -6 -7 VGS -8 -9 (V) 20 Ta=25℃ 18 Pulsed 16 ( ) ( ) 8 14 VGS=-5V 7 RDS(ON) RDS(ON) -5 RDS(ON) —— VGS RDS(ON) —— ID 10 9 -4 GATE TO SOURCE VOLTAGE ID=-0.1A 12 ON-RESISTANCE ON-RESISTANCE 6 5 4 VGS=-10V 3 10 Ta=100℃ 8 6 4 Ta=25℃ 2 1 -50 2 0 -100 -150 -200 -250 DRAIN CURRENT -300 ID -350 -400 -0 (mA) -1 -2 -3 -4 -5 -6 -7 GATE TO SOURCE VOLTAGE VGS -8 -9 -10 (V) Threshold Voltage IS —— VSD -1 -2.2 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -2.0 -0.1 Ta=100℃ Ta=25℃ -1.8 ID=-250uA -1.6 -1.4 -1.2 -1.0 -0.01 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1.2 -1.4 -0.8 25 -1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 TJ 125 (℃ ) Rev. - 1.0 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E E1 e e1 L L1  Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0. 0.150 2.000 2.200 1.150 1.350 2.150 2.4 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.00 0.006 0.079 0.087 0.045 0.053 0.085 0.09 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 6277DSHDQG5HHO SOT-363 Reel D I G W2 H 3000 2500 2000 1500 1000 D2 D1 500 W1 www.jscj-elec.com 6 Rev. - 1.0