CJ3439KDW

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW V(BR)DSS 20 V N channel+P Channel MOSFET ID RDS(on)MAX SOT-363 380mΩ@ 4.5V    450mΩ@ 2.5V  0.75A 800mΩ@1.8V   -20 V   520mΩ@-4.5V  700mΩ@-2.5V  -0.66A 950mΩ(TYP)@-1.8V   FEATURE z Surface Mount Package z Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K (independently) In a Package APPLICATION z Load/ Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift Equivalent Circuit MARKING D1 6 1 S1 G2 5 2 G1 S2 4 3 D2 ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit N-MOSFET Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID 0.75 A Pulsed Drain Current (tp=10us) IDM 1.8 A Drain-Source Voltage VDS -20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current (note 1) ID -0.66 A Pulsed Drain Current (tp=10us) IDM -1.2 A RθJA 833 ℃/W P-MOSFET Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient (note 1) Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ TL 260 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) www.cj-elec.com 1 D,Mar,2016 MOSFET ELECTRICAL CHARACTERISTICS N-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±20 uA VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 2) Drain-source on-resistance(note 2) RDS(on) 20 V 0.35 1.1 V VGS =4.5V, ID =0.65A 380 mΩ VGS =2.5V, ID =0.55A 450 mΩ VGS =1.8V, ID =0.45A 800 mΩ 1.2 V 120 Forward tranconductance(note 2) gFS VDS =10V, ID =0.8A Diode forward voltage VSD IS=0.15A, VGS = 0V 1.6 S DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 79 VDS =16V,VGS =0V,f =1MHz 13 20 pF pF 9 15 pF Crss SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time td(on) Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time VGS=4.5V,VDS=10V, ID=500mA,RGEN=10Ω tf 6.7 ns 4.8 ns 17.3 ns 7.4 ns P-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit -1 µA STATIC CHARACTERISTICS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage (note 2) Drain-source on-resistance(note 2) V(BR)DSS VGS = 0V, ID =-250µA IDSS VDS =-20V,VGS = 0V IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =-250µA RDS(on) -20 V -0.35 VGS =-4.5V, ID =-1A VGS =-2.5V, ID =-0.8A VGS =-1.8V, ID =-0.5A 950 1.2 Forward tranconductance(note 2) gFS VDS =-10V, ID =-0.54A Diode forward voltage VSD IS=-0.5A, VGS = 0V ±20 uA -1.1 V 520 mΩ 700 mΩ mΩ S -1.2 V 170 DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 113 VDS =-16V,VGS =0V,f =1MHz 15 25 pF pF 9 15 pF SWITCHING CHARACTERISTICS (note 3, 4) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VGS=-4.5V,VDS=-10V, ID=-200mA,RGEN=10Ω tf 9 ns 5.8 ns 32.7 ns 20.3 ns Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. www.cj-elec.com 2 D,Mar,2016 7\SLFDO&KDUDFWHULVWLFV N-Channel MOS Output Characteristics 4.5 Transfer Characteristics 4.0 5.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=100℃ 2.0 1.5 0.5 0.5 0.0 0.0 Ta=25℃ 1.0 VGS=1.5V 1.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0.0 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Pulsed Ta=25℃ 700 350 (m) 400 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Pulsed Ta=100℃ 400 300 Ta=25℃ 200 0.2 0.3 0.4 0.5 0.7 0.6 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 100 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 VSD (V) 1.4 1.6 0.2 25 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) ZZZFMHOHFFRP3  D,Mar,2016 7\SLFDO&KDUDFWHULVWLFV P-Channel MOS Output Characteristics -3.0 VGS=-4V,-5V VDS=-3V Ta=25℃ (A) -2.0 VGS=-2.5V DRAIN CURRENT DRAIN CURRENT Ta=25℃ ID -2.0 ID (A) Pulsed VGS=-3V Pulsed -2.5 Transfer Characteristics -2.5 VGS=-2V -1.5 -1.0 -1.0 VGS=-1.5V -0.5 -0.5 -0.0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -0.0 -5 -0 (V) -1 Ta=25℃ Pulsed Pulsed 800 700 VGS=-2.5V 600 (m) VGS=-1.8V 900 800 RDS(ON) 900 700 ON-RESISTANCE (m) RDS(ON) -4 (V) 1000 1000 500 ID=-1A Ta=100℃ 600 500 Ta=25℃ 400 400 300 -0.5 -3 VGS RDS(ON) —— VGS RDS(ON) —— ID 1100 -2 GATE TO SOURCE VOLTAGE 1200 ON-RESISTANCE Ta=100℃ -1.5 VGS=-4.5V -0.6 -0.7 -0.8 -0.9 DRAIN CURRENT -1.0 ID -1.1 300 -1.2 -1 (A) -2 -3 -4 GATE TO SOURCE VOLTAGE VGS -5 (V) Threshold Voltage IS —— VSD -2 -0.8 Pulsed -0.6 VTH Ta=100℃ Ta=25℃ -0.1 -0.01 -0.0 -0.2 -0.4 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -1 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD (V) -1.2 -1.4 ID=-250uA -0.4 -0.2 -0.0 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) ZZZFMHOHFFRP4  D,Mar,2016 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E E1 e e1 L L1  Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.150 0.350 0. 0.150 2.000 2.200 1.150 1.350 2.150 2.4 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.006 0.014 0.00 0.006 0.079 0.087 0.045 0.053 0.085 0.09 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  ZZZFMHOHFFRP5D,Mar,2016 6277DSHDQG5HHO SOT-363 Tape and reel SOT-363 Embossed Carrier Tape P0 C d P1 Packaging Description: SOT-363 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 17.8cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). B F W E A P A A A-A Dimensions are in millimeter Pkg type A B C d E F P0 P P1 W SOT-363 2.25 2.55 1.20 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00 SOT-363 Tape Leader and Trailer Leader Tape Trailer Tape 50±2 Empty Pockets 100±2 Empty Pockets Components SOT-363 Reel D I G W2 3000 H 2500 2000 1500 1000 D2 D1 500 W1 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7''Dia Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220 ZZZFMHOHFFRP6D,Mar,2016