CJAB20SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN DFN WB3×3-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP 8mΩ@10V 60V ID DFNWB3×3-8L 20A 9.7mΩ@4.5V DESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT AB20SN06 = Part No. 8 D 7 D 6 D D 5 Solid dot=Pin1 indicator XX=Date Code 2 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 20 A Pulsed Drain Current IDM 50 A 70 mJ PD 3.1 W RθJA 46 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=30V, L=0.3 mH, RG=25Ω, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =60V, VGS =0V 0.3 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.7 2.5 V Static drain-source on-sate resistance RDS(on) VGS =10V, ID =12A 8.0 9.0 mΩ VGS =4.5V, ID =12A 9.7 13.0 mΩ VDS =5V, ID =12A 70 Off characteristics Drain-source breakdown voltage 60 V On characteristics (note1) Forward transconductance gFS 1.1 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =30V,VGS =0V, f =1MHz 1691 pF 395 9 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 6.5 Turn-on delay time td(on) 6 Turn-on rise time Turn-off delay time Turn-off fall time VDS=30V, VGS=10V, ID=12A 30 nC 3.5 tr VDS=30V,VGS=10V, 5 td(off) RG=10Ω,ID=12A 29 tf 45 ns 7 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=12A 1.2 V IS 12 A ISM 36 A Reverse Recovery Time trr VR=30V,IF=12A, Reverse Recovery Charge Qrr dI/dt=300A/μs(Note1) 0.9 50 ns 120 nC Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Output Characteristics 24 Transfer Characteristics 30 VDS=5V Pulsed 20 Pulsed 25 (A) 16 ID VGS=4.5V DRAIN CURRENT DRAIN CURRENT ID (A) VGS=10V 12 8 4 20 15 Ta=25℃ 10 5 VGS=2.5V 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE 4 VDS 0 5 0 1 (V) 2 Pulsed (m) 16 RDS(ON) 14 12 VGS= 4.5V 10 ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE Pulsed ID=10A 18 16 8 VGS=10V 6 4 2 0 14 12 Ta=100℃ 10 8 Ta=25℃ 6 4 2 5 3 10 15 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 8 VGS 9 10 (V) 2.5 Pulsed 2.0 VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 7 Threshold Voltage IS —— VSD SOURCE CURRENT 6 GATE TO SOURCE VOLTAGE 25 0.1 0.01 1E-3 4 (V) 20 Ta=25℃ 18 VGS RDS(ON)—— VGS RDS(ON) —— ID 20 3 GATE TO SOURCE VOLTAGE 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 800 1000 ID=250uA 1.5 1.0 0.5 0.0 25 1200 VSD (mV) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 DFNWB3×3-8 L NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0