JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB40N03
N-Channel Power MOSFET
V(BR)DSS
ID
RDS(on)MAX
PDFNWB3.3×3.3-8L
6.5mΩ@10V
30 V
10.5mΩ@4.5V
40A
DESCRIPTION
The CJAB40N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
Battery switch
Good stability and uniformity with high EAS
Load switch
Excellent package for good heat dissipation
High density cell design for ultra low RDS(ON)
Special process technology for high ESD
Fully characterized avalanche voltage and
capability
current
APPLICATIONS
SMPS and general purpose applications
Hard switched and high frequency circuits
MARKING
Uninterruptible Power Supply
EQUIVALENT CIRCUIT
CJAB40N03 = Part No.
CJAB
40N03
XX
8
D
7
D
6
D
5
D
Solid dot=Pin1 indicator
XX=Date Code
2
1
S
3
S
4
S
G
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
40
A
Pulsed Drain Current
IDM
160
A
270
mJ
PD
3
W
RθJA
41.67
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
Single Pulsed Avalanche Energy
EAS
Power Dissipation
Thermal Resistance from Junction to Ambient
(1)
(1).EAS condition: VDD=15V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
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1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =24V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.5
2.5
V
Static drain-source on-sate resistance
RDS(on)
VGS =10V, I D =20A
4.5
6.5
mΩ
VGS =4.5V, I D =20A
7.2
10.5
mΩ
VDS =10V, ID =20A
24
Off characteristics
Drain-source breakdown voltage
30
V
On characteristics (note1)
Forward transconductance
gFS
1.0
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS =25V,VGS =0V,
f =1MHz
2000
pF
228
155
Switching characteristics (note 2)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
18
Turn-on delay time
td(on)
12
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDS=25V, VGS=10V,
ID=10A
50
tr
VDS=15V,ID=10A,
36
td(off)
VGS=10V,RG=3Ω
49
tf
nC
3
ns
12
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=20A
1.2
V
IS
40
A
ISM
160
A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
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2
Rev. - 1.0
Typical Characteristics
Output Characteristics
60
10V
Transfer Characteristics
30
VDS=5V
Pulsed
VGS= 7V
Pulsed
50
25
(A)
ID
40
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS= 5V
VGS=4V
30
20
10
20
15
Ta=25℃
10
5
VGS=2.5V
0
0
1
2
3
DRAIN TO SOURCE VOLTAGE
4
VDS
0
5
0
1
(V)
2
Ta=25℃
(m)
16
VGS=4.5V
RDS(ON)
7
6
VGS=10V
5
ON-RESISTANCE
(m)
RDS(ON)
ON-RESISTANCE
Pulsed
ID=20A
18
Pulsed
8
4
3
2
1
14
12
10
Ta=100℃
8
6
4
Ta=25℃
2
3
5
10
15
DRAIN CURRENT
20
ID
0
25
3
(A)
4
5
7
8
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
2.5
Pulsed
2.0
VTH
(V)
10
1
Ta=25℃
Ta=100℃
THRESHOLD VOLTAGE
IS (A)
6
GATE TO SOURCE VOLTAGE
25
SOURCE CURRENT
4
(V)
20
9
0.1
0.01
1E-3
VGS
RDS(ON)—— VGS
RDS(ON) —— ID
10
0
3
GATE TO SOURCE VOLTAGE
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
1200
VSD (mV)
ID=250uA
1.5
1.0
0.5
0.0
25
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
Rev. - 1.0
Symbol
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
Dimensions In Millimeters
Min.
Max.
0.650
0.850
0.152 REF.
0~0.05
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0~0.100
0~0.100
0.315
0.515
9°
13°
Dimensions In Inches
Min.
Max.
0.026
0.033
0.006 REF.
0~0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0~0.004
0~0.004
0.012
0.020
9°
13°
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 1.0
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