CJAB60N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB60N03 N-Channel Power MOSFET ID RDS(on)MAX V(BR)DSS 4.2mΩ@10V 30 V PDFNWB3.3×3.3-8L 60A 7.3mΩ@4.5V DESCRIPTION The CJAB60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  Battery switch  Good stability and uniformity with high EAS  Load switch  Excellent package for good heat dissipation  High density cell design for ultra low RDS(ON)  Special process technology for high ESD  Fully characterized avalanche voltage and capability current APPLICATIONS  SMPS and general purpose applications  Uninterruptible Power Supply  Hard switched and high frequency circuits MARKING EQUIVALENT CIRCUIT CJAB60N03 = Part No. CJAB 60N03 XX 8 D 7 D 6 D 5 D Solid dot=Pin1 indicator XX=Date Code 2 1 S 3 S 4 S G ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ① Continuous Drain Current ID Pulsed Drain Current IDM Maximum Power Dissipation PD ⑥ Single Pulsed Avalanche Energy Thermal Resistance from Junction to Ambient ② 60 240 W EAS 420 mJ RθJA ⑥ 83.3 ℃/W 150 Storage Temperature TSTG -55~ +150 TL 260 1 A 1.5 TJ www.jscj-elec.com V ③ Junction Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) Unit ℃ Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250uA 30 Zero gate voltage drain current IDSS VDS =24V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA VGS(th) VDS =VGS, ID =250uA 1.4 2.5 V VGS =10V, ID =20A 2.9 4.2 mΩ VGS =4.5V, ID =20A 4.2 7.3 mΩ VDS =10V, ID =20A 24 Off characteristics Drain-source breakdown voltage V On characteristics ④ Gate-threshold voltage Static drain-source on-sate resistance Forward transconductance Dynamic characteristics RDS(on) gFS 1.0 S ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Switching characteristics VDS =15V,VGS =0V, f =100KHz 1230 2460 3198 204 409 531 186 373 485 pF ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 19.7 Turn-on delay time td(on) 19 Turn-on rise time Turn-off delay time Turn-off fall time VGS=10V, VDS=25V, ID=14A 61.2 tr VDS=15V,RL=0.75Ω, 44 td(off) VGS=10V,RG=3Ω 58 tf nC 4.7 ns 16.7 Drain-Source Diode Characteristics Drain-source diode forward voltage VSD ④ Continuous drain-source diode forward current IS ① Pulsed drain-source diode forward current ISM VGS =0V, IS=20A ② 1.2 V 60 A 240 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=15V,VGS=10V, L=0.1mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics 60 60 Pulsed Ta=25℃ VDS=12V Pulsed Ta=25℃ (A) ID 40 VGS=3.0V DRAIN CURRENT DRAIN CURRENT ID (A) VGS=10V,6V,4.5V,4V,3.5V 20 40 20 VGS=2.5V 0 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 1 (V) 2 Ta=25℃ Pulsed Pulsed (m) Ta=25℃ 15 RDS(ON) 6 ON-RESISTANCE VGS= 4.5V 4 VGS= 10V 2 0 ID=20A 10 5 0 5 20 40 DRAIN CURRENT ID 0 60 (A) 2 4 6 8 GATE TO SOURCE VOLTAGE IS —— VSD VGS 10 Threshold Voltage Ta=25℃ Ta=25℃ Pulsed (V) Pulsed 2.0 VTH 10 THRESHOLD VOLTAGE IS (A) 12 (V) 2.5 60 SOURCE CURRENT 5 (V) 20 RDS(ON) (m) 4 VGS RDS(ON)—— VGS RDS(ON) —— ID 8 ON-RESISTANCE 3 GATE TO SOURCE VOLTAGE 1 0.1 0.1 1 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.5 1.0 0.5 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Typical Characteristics Gate Charge Capacitances 10000 10 VDS=25V f=100KHz Pulsed (V) ID =14A GATE TO SOURCE VOLTAGE C (pF) CAPACITANCE 1000 Coss Crss 100 0.1 6 4 2 0 1 30 10 DRAIN TO SOURCEVOLTAGE 1000 8 VGS Ciss Pulsed VDS (V) 0 10 20 30 40 50 60 65 GATE CHARGE (nC) Maximum Forward Biased Safe Operating Area Tc=25℃ Single pulse 100 RDSON limited DRAIN CURRENT ID (A) ICM 100us 10 1ms 10ms 1 DC 0.1 0.1 BVDSS 1 DRAIN TO SOURCE VOLTAGE www.jscj-elec.com 10 VDS 100 (V) 4 Rev. - 1.0 Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0  www.jscj-elec.com 6 Rev. - 1.0