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CJAB35P03

CJAB35P03

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    PDFN8_3.3X3.3MM

  • 描述:

    -

  • 数据手册
  • 价格&库存
CJAB35P03 数据手册
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3×3.3-8L Plastic-Encapsulate MOSFETS CJAB35P03 P-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID -30V   15mΩ@ -10V -35A PDFNWB3.3×3.3-8L DESCRIPTION The CJAB35P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES  High density cell design for ultra low RDS(ON)  Excellent package for good heat dissipation  Fully characterized avalanche voltage and  Special process technology for high ESD current  capability Good stability and uniformity with high EAS APPLICATIONS  Battery and loading switching MARKING EQUIVALENT CIRCUIT D 8 CJAB35P03 = Part No. CJAB 35P03 XX D 7 D 6 D 5 Solid dot=Pin1 indicator XX=Date Code 1 S 2 S 3 S 4 G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID(1) -35 A Pulsed Drain Current IDM -140 A EAS(1) 240 mJ PD 3 W 41.67 ℃/W Single Pulsed Avalanche Energy Power Dissipation (2) Thermal Resistance from Junction to Ambient RθJA Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ (1).EAS condition: VDD=15V,L=0.1mH, RG=25Ω, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt www.jscj-elec.com 1 Rev. - 1.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current IDSS VDS =-24V, VGS =0V -1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =-250µA -1.6 -2.5 V Static drain-source on-sate resistance RDS(on) VGS =-10V, ID =-12A 9 15 mΩ VGS =-4.5V, I D =-12A 14 25 mΩ VDS =-10V, ID =-12A 22 On characteristics (note1) Forward transconductance gFS -1.0 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =-15V,VGS =0V, f =1MHz 2280 pF 385 278 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time VDS=-15V,ID=-12A, VGS=-10V 38 nC 7 9 10 VDD=-15V,ID=-1A,RL=15Ω 22 VGS=-10V,RG=2.5Ω 36 tf ns 9 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) VSD -1.2 V IS -35 A ISM -140 A Continuous drain-source diode forward current(note3) Pulsed drain-source diode forward current VGS =0V, IS=-12A -0.8 Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. 3. Surface Mounted on FR4 Board, t ≤ 10 sec. www.jscj-elec.com 2 Rev. - 1.0 Typical Characteristics Transfer Characteristics Output Characteristics -70 -5 VDS=-10V Pulsed Pulsed VGS=-10V,-6V (A) -4 (A) -56 ID -42 DRAIN CURRENT DRAIN CURRENT ID VGS=-5.0V -28 VGS=-4.0V -3 TJ=125℃ TJ=25℃ -2 -1 -14 VGS=-3.0V -0 -0.0 -0.5 -1.0 -1.5 -2.0 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -2.5 -0.5 -1.0 (V) -1.5 -2.0 20 -4.0 -4.5 -5.0 (V) Pulsed ID=-12A 22 Pulsed 20 16 (m) VGS=-4.5V RDS(ON) 14 12 VGS=-10V 10 ON-RESISTANCE (m) -3.5 VGS 24 Ta=25℃ 18 RDS(ON) -3.0 RDS(ON)—— VGS RDS(ON) —— ID ON-RESISTANCE -2.5 GATE TO SOURCE VOLTAGE 8 6 4 18 Ta=100℃ 16 14 12 10 8 Ta=25℃ 6 4 2 2 0 -0.5 -10 -20 -30 DRAIN CURRENT ID -40 0 -4.0 -50 (A) -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 GATE TO SOURCE VOLTAGE VGS -8.5 -9.0 -9.5 -10.0 (V) Threshold Voltage IS —— VSD -3.0 -100 Pulsed -2.5 VTH Ta=100℃ -1 Ta=25℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) -10 -0.1 -0.01 -1E-3 -2.0 ID=-250uA -1.5 -1.0 -0.5 -0 -200 -400 -600 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -800 -1000 -1200 VSD (mV) -0.0 25 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 Symbol A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.300 2.600 2.900 3.100 3.150 3.450 1.535 1.935 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0~0.100 0~0.100 0.315 0.515 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.091 0.102 0.114 0.122 0.124 0.136 0.060 0.076 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0~0.004 0~0.004 0.012 0.020 9° 13° NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 1.0
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