JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL2301
Dual P-Channel MOSFET
V(BR)DSS
ID
RDS(on)MAX
-20 V
SOT-23-6L
90mΩ@-4.5V
125mΩ@-2.5V
-2.3A
200mΩ@-1.8V
APPLICATION
DC/DC converter
Load switch for portable devices
FEATURE
TrenchFET Power MOSFET
Equivalent to Two CJ2301
Equivalent Circuit
MARKING
PIN1
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-2.3
A
Pulsed Drain Current
IDM
-10
A
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Thermal Resistance from Junction to Ambient
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ 150
℃
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1
Rev. - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-20V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
±100
nA
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
VGS(th)
RDS(on)
-20
V
-0.7
-1
V
VGS =-4.5V, ID =-2.5A
58
90
mΩ
VGS =-2.5V, ID =-2A
80
125
mΩ
VGS =-1.8V, ID =-1.6A
120
200
mΩ
VDS =VGS, ID =-250µA
Forward tranconductance (note 1)
gFS
VDS =-5V, ID =-2.8A
Diode forward voltage (note 1)
VDS
IS=-0.7A, VGS = 0V
-0.4
4
S
-1.2
V
DYNAMIC PARAMETERS (note2)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS =-10V,VGS =0V,f =1MHz
405
pF
75
pF
55
pF
SWITCHING PARAMETERS (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge (-4.5V)
Total Gate Charge (-2.5V)
td(on)
tr
td(off)
ns
VDD=-10V,VGEN=-4.5V,ID=-1A
60
ns
RL=10Ω,RGEN=1Ω
50
ns
20
ns
5.5
10
nC
3.3
6
nC
tf
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Notes :
20
VDS =-10V,VGS =-2.5V,ID=-3A
0.7
nC
1.3
nC
1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
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2
Rev. - 1.0
Typical Characteristics
Output Characteristics
-10
Transfer Characteristics
-10
VGS= -4.5V,-3.5V,-2.5V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
-8
-8
(A)
VGS=-1.5V
ID
-4
-6
DRAIN CURRENT
ID
-6
DRAIN CURRENT
(A)
VGS=-2.0V
-4
-2
-0
-2
VGS=-1.0V
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON)
150
——
VDS
-0
-0.0
-4
(V)
-0.5
-1.0
-1.5
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
250
Ta=25℃
——
-2.0
VGS
-2.5
(V)
VGS
Ta=25℃
Pulsed
Pulsed
200
(mΩ)
90
VGS=-4.5V
60
30
-0
-2
-4
-6
DRAIN CURRENT
-10
-3
RDS(ON)
VGS=-2.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
120
IS
——
ID
-8
150
100
50
0
-10
(A)
ID=-2.8A
-0
-2
-4
GATE TO SOURCE VOLTAGE
-6
VGS
-8
(V)
VSD
Ta=25℃
Pulsed
SOURCE CURRENT
IS
(A)
-1
-0.3
-0.1
-0.03
-0.01
-3E-3
-1E-3
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
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-1.0
VSD
-1.2
(V)
3
Rev. - 1.0
627/3DFNDJH2XWOLQH'LPHQVLRQV
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
627/6XJJHVWHG3DG/D\RXW
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
www.jscj-elec.com
4
Rev. - 1.0
627/7DSHDQG5HHO
www.jscj-elec.com
5
Rev. - 1.0
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