CJQ6601

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 P-channel and N-channel Complementary MOSFETS SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. FEATURES  Including a N-ch CJ3400 MOS and a P-ch  Surface mount package CJ3401 MOS (independently) in a package  Low RDS(on)  High-speed power inverter APPLICATIONS  Suitable for a multitude of applications. MARKING: EQUIVALENT CIRCUIT Q6601= Device code D1 Solid dot=Pin1 indicator D1 D2 8 7 6 1 2 3 D2 5 Solid dot = Green molding compound device, if none, the normal device Front side S1 G1 S2 4 G2 YY=Date Code MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Symbol Parameter Unit N-ch MOS P-ch MOS VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±12 ±12 V ID Drain Current -Continuous(Note1) 5.8 -4.2 A IDM Drain Current - Pulse(Note3) 23.2 -16.8 A Power Dissipation 1.4 W Thermal Resistance from Junction to Ambient 89 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature 260 ℃ Power Dissipation, Temperature and Thermal Resistance PD RθJA www.jscj-elec.com 1 Rev. - 1.0 N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 1) Drain-source on-resistance(note 1) RDS(on) 30 V 0.7 1 µA ±100 nA 1.4 V VGS =10V, ID =5.8A 19 35 mΩ VGS =4.5V, ID =5A 21 40 mΩ VGS =2.5V, ID =4A 26 52 mΩ Forward transconductance(note 1) gFS VDS =5V, ID =5A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 8 S 1 V 1050 pF DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =15V,VGS =0V,f =1MHz 99 pF 77 pF SWITCHING PARAMETERS (note 2) Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 5 ns VGS=10V,VDS=15V, 7 ns RL=2.7Ω,RGEN=3Ω, ID=0.5A 40 ns 6 ns tf P-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA VGS(th) VDS =VGS, ID =-250µA -1.3 V VGS =-10V, ID =-4.2A 65 mΩ VGS =-4.5V, ID =-4A 75 mΩ VGS =-2.5V, ID =-1A 90 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) Forward transconductance (note 1) gFS VDS =-5V, ID =-5A Diode forward voltage(note 1) VSD IS=-1A, VGS = 0V -30 V -0.7 7 S -1 V DYNAMIC PARAMETERS (note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =-15V,VGS =0V,f =1MHz 954 pF 115 pF 77 pF SWITCHING PARAMETERS (note 2) Turn-on delay time td(on) Turn-on rise time Turn-off delay time tr td(off) Turn-off fall time 6.3 ns VGS=-10V,VDS=-15V, 3.2 ns RL=3.6Ω,RGEN=6Ω, ID=0.5A 38.2 ns 12 ns tf Note: 1、 Pulse test: pulse width =300μs, duty cycle≤ 2% 2、 These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 1.0 N-channel MOSFET ELECTRICAL CHARACTERISTICS Output Characteristics 25 Transfer Characteristics 10 Pulsed VDS=5.0V VGS=10.0V、4.5V、3.0V Pulsed 20 8 (A) ID 15 10 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=2.5V VGS=2.0V 5 0 0 1 2 3 4 RDS(ON) —— VDS 0 0.0 5 0.5 (V) 1.0 ID RDS(ON) 50 Ta=25℃ 2.0 (mΩ) (mΩ) RDS(ON) 30 ON-RESISTANCE VGS=2.5V 25 VGS=4.5V 20 VGS=10V —— VGS 2.5 (V) VGS Ta=25℃ ID=5A 45 Pulsed 35 1.5 GATE TO SOURCE VOLTAGE 40 RDS(ON) Ta=25℃ 4 2 DRAIN TO SOURCE VOLTAGE ON-RESISTANCE Ta=100℃ 6 Pulsed 40 35 Ta=100℃ 30 25 20 Ta=25℃ 15 10 15 5 10 4 1 8 12 DRAIN CURRENT ID 16 0 20 6 7 8 VGS 9 10 (V) Threshold Voltage (V) Pulsed 0.9 THRESHOLD VOLTAGE VTH IS (A) SOURCE CURRENT 5 1.0 Ta=25℃ 10 4 GATE TO SOURCE VOLTAGE IS —— VSD 20 3 (A) 1 0.1 200 300 400 500 600 700 800 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 900 1000 1100 0.7 0.6 0.5 25 1200 VSD (mV) ID=250uA 0.8 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 1.0 P-channel MOSFET ELECTRICAL CHARACTERISTICS Output Characteristics Transfer Characteristics -25 -10 VGS=-10V VDS=-5.0V Pulsed VGS=-4.5V -8 ID (A) VGS=-3V -15 -10 DRAIN CURRENT ID DRAIN CURRENT Ta=25℃ (A) -20 VGS=-2.5V -5 -6 Ta=100℃ -4 -2 VGS=-2V -0 -0 -1 -2 -3 -4 DDAIN TO SOURCE VOLTAGE RDS(ON) —— VDS -0 -0.0 -5 -0.5 (V) -1.0 -1.5 -2.0 GATE TO SOURCE VOLTAGE ID RDS(ON) —— VGS -2.5 -3.0 (V) VGS 180 120 Ta=25℃ Pulsed Ta=25℃ ID=-4A 160 Pulsed (m) VGS=-2.5V RDS(ON) 80 60 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 100 VGS=-4.5V 40 VGS=-10V 140 120 100 Ta=100℃ 80 60 40 Ta=25℃ 20 20 0 -1 -2 -3 -4 -5 -6 DRAIN CURRENT IS —— -7 ID -8 -9 0 -10 -2 -3 -4 -5 -6 -7 GATE TO SOURCE VOLTAGE (A) VSD -8 VGS -9 -10 (V) Threshold Voltage -20 -1.2 -10 THRESHOLD VOLTAGE SOURCE CURRENT -1.0 VTH -1 IS (A) (V) -1.1 -0.1 -0.01 ID=-250uA -0.9 -0.8 -0.7 -0.6 -0.5 -1E-3 -0 -200 -400 -600 -800 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com -1000 VSD -1200 -0.4 25 -1400 50 75 JUNCTION TEMPERATURE (V) 4 100 TJ 125 (℃ ) Rev. - 1.0 SOP8 Package Outline Dimensions Symbol A A1 A2 b c D e E E1 L θ Dimensions In Millimeters Min Max Dimensions In Inches Min Max --1.750 0.100 0.250 1.250 1.500 0.330 0.510 0.170 0.250 4.800 5.000 1.270（BSC） --0.069 0.004 0.010 0.049 0.059 0.013 0.020 0.007 0.010 0.189 0.197 0.050（BSC） 5.800 3.800 0.400 6.200 4.000 1.270 0.228 0.150 0.016 0.244 0.157 0.050 0° 8° 0° 8° SOP8 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 1.0 SOP8 Tape and Reel www.jscj-elec.com 6 Rev. - 1.0