JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJUN
N-Channel Power MOSFET
V(BR)DSS
RDS(on)TYP
ID
100V
70mΩ@10V
15A
TO-252-2L
DESCRIPTION
The CJU15N10 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used
in a wide variety of applications
1. GATE
2. DRAIN
3. SOURCE
2
1
FEATURE
Excellent package for good heat dissipation
Ultra low gate charge
Low reverse transfer capacitance
Fast switching capability
Avalanche energy specified
APPLICATION
Power switching application
MARKING
EQUIVALENT CIRCUIT
U15N10
XXXX
3
U15N10 = Device code.
Solid dot = Green molding compound device,
if none, the normal device.
XXXX = Code.
2
1
3
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
①
15
A
Pulsed Drain Current
IDM
②
60
A
Single Pulsed Avalanche Energy
EAS
③
49
mJ
PD
①
Power Dissipation
Thermal Resistance from Junction to Ambient
Thermal Resistance from Junction to Case
W
RθJA
100
℃/W
RθJC
①
2.78
℃/W
-55~+150
℃
TJ ,Tstg
Operating Junction and Storage Temperature Range
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45
⑥
1
Rev. - 2.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
V(BR) DSS
VGS = 0V, ID =250µA
100
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
TJ =25℃
1.0
TJ =125℃
100
Zero gate voltage drain current
IDSS
VDS =80V,
VGS =0V
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
Static drain-source on-sate resistance
RDS(on)
VGS =10V, ID =8A
On characteristics
V
µA
±100
nA
2.5
3.0
V
70
100
mΩ
773
1500
46
92
43
90
④
Dynamic characteristics
1.0
④⑤
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
Switching characteristics
VDS =25V,VGS =0V,
f = 100KHz
f =1MHz
pF
Ω
1.5
④⑤
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
18
36
2.8
5.6
Qgd
7.4
14.8
td(on)
15
VGS=10V, VDS=50V,
ID=10A
VDD=25V,RL=5Ω,
tr
VGS=10V,RG=1.0Ω
td(off)
tf
33
nC
ns
41
6
Drain-Source Diode Characteristics
Drain-source diode forward voltage
VSD
Continuous drain-source diode forward
IS
current
Pulsed drain-source diode forward current
④
1.2
V
①
15
A
②
60
A
ISM
VGS =0V, IS=8A
Notes:
1.TC=25℃ Limited only by maximum temperature allowed.
2.PW≤10μs, Duty cycle≤1%.
3.EAS condition: VDD=25V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25℃.
4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
5.Guaranteed by design, not subject to production.
6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃.
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2
Rev. - 2.0
Typical Characteristics
Transfer Characteristics
Output Characteristics
20
5
TJ=25℃
Pulsed
VDS=60V
Pulsed
4
VGS=6V
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
15
ID
(A)
VGS=10V,8V
10
3
TJ=25℃
2
5
VGS=4.5V
1
VGS=4V
0
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
5
0
(V)
1
2
VGS
5
6
(V)
160
ID=8A
Pulsed
Pulsed
(m)
TJ=25℃
80
RDS(ON)
VGS= 10V
RDS(ON)
(m)
4
RDS(ON)—— VGS
RDS(ON) —— ID
100
60
ON-RESISTANCE
ON-RESISTANCE
3
GATE TO SOURCE VOLTAGE
40
120
TJ=125℃
80
TJ=25℃
20
40
2
4
6
8
DRAIN CURRENT
10
ID
12
14
2
(A)
4
6
8
10
GATE TO SOURCE VOLTAGE
IS —— VSD
VGS
Threshold Voltage
4
50
Pulsed
(V)
3
VTH
10
TJ=125℃
THRESHOLD VOLTAGE
IS (A)
Pulsed
SOURCE CURRENT
12
(V)
TJ=25℃
1
0.1
1
0.2
SOURCE TO DRAIN VOLTAGE
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2
1
0
25
2
VSD (V)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
Rev. - 2.0
Typical Characteristics
Gate Charge
Capacitances
10
f=100KHz
Pulsed
VDS=50V
ID =10A
Pulsed
8
VGS
Ciss
1000
GATE TO SOURCE VOLTAGE
CAPACITANCE
C (pF)
(V)
10000
Coss
100
Crss
10
0.1
4
2
0
1
DRAIN TO SOURCEVOLTAGE
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6
10
0
50
VDS (V)
5
10
15
20
GATE CHARGE (nC)
4
Rev. - 2.0
TO-252-2L Package Outline Dimensions
D
A
D1
c
V
L3
h
E
φ
L4
L
A1
L2
L1
D2
b
e
θ
Symbol
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
Φ
θ
h
V
Dimensions In Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.635
0.770
0.460
0.580
6.500
6.700
5.100
5.460
4.830 REF.
6.000
6.200
2.186
2.386
9.712
10.312
2.900 REF.
1.400
1.700
1.600 REF.
0.600
1.000
1.100
1.300
0°
8°
0.000
0.300
5.250 REF.
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.025
0.030
0.018
0.023
0.256
0.264
0.201
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.382
0.406
0.114 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0.043
0.051
0°
8°
0.000
0.012
0.207 REF.
TO-252-2L Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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5
Rev. - 2.0
TO-252-2L Tape and Reel
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6
Rev. - 2.0
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