CJU100N03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU100N03 N-Channel Power MOSFET V(BR)DSS RDS(on) TYP 4.5Pȍ#9 9 TO-252-2L ID 10$ 6.5Pȍ#4.59 DESCRIPTION The CJU100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications  *$7(  '5$,1  6285&(   FEATURE  Excellent package for good heat dissipation Ultra low gate charge   Low reverse transfer capacitance Fast switching capability   Avalanche energy specified APPLICATION  Power switching application MARKING EQUIVALENT CIRCUIT U100N03 XXXX  81001 'HYLFHFRGH. 6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH. LIQRQHWKHQRUPDOGHYLFH. ;;;; &RGH. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit 'UDLQ6RXUFH9ROWDJH 9'6  9 *DWH6RXUFH9ROWDJH 9*6 “ 9 &RQWLQXRXV'UDLQ&XUUHQW ID ①  $ 3XOVHG'UDLQ&XUUHQW IDM②  $ 6LQJOH3XOVHG$YDODQFKH(QHUJ\ ($6③ 100 mJ Power Dissipation PD Thermal Resistance from Junction to Ambient 90 W RθJA⑥ 100 ℃/W ① 1.39 ℃/W -55 ~+150 ℃ ① Thermal Resistance from Junction to Case RθJC Junction Temperature and Storage Temperature Range TJ Tstg ZZZMVFMHOHFFRP  Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 Я unless otherwise specified Parameter Symbol Test Condition V(BR) DSS VGS = 0V, ID =250µA Min Typ Max Unit Off characteristics Drain-source breakdown voltage 30 V VDS =24V, TJ =25℃ 1.0 VGS =0V TJ =125℃ 100 Zero gate voltage drain current IDSS Gate-body leakage current IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-sate resistance RDS(on) µA ±100 nA 1.7 3.0 V VGS =10V, ID =20A 4.5 6.5 mΩ VGS =4.5V, ID =20A 6.5 9.0 mΩ ④ On characteristics Dynamic characteristics 1.0 ④⑤ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching characteristics VDS =15V,VGS =0V, f =1MHz f =1MHz 2734 5700 300 580 244 480 2.0 pF Ω ④⑤ Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time VDS=15V, VGS=10V, ID=50A VDD=30V,ID=1A, tr RL=15Ω,V GS=10V, td(off) RG=6Ω tf 49 98 8.3 17 10 20 7 14 29 58 28 56 10 20 nC ns Drain-Source Diode Characteristics Drain-source diode forward voltage Continuous drain-source diode forward current Pulsed drain-source diode forward current ④ VSD IS VGS = 0V, IS=10A ① ② ISM 1.2 V 100 A 400 A Notes: 1.TC=25℃ Limited only by maximum temperature allowed. 2.PW≤10μs, Duty cycle≤1%. 3.EAS condition: VDD=15V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ = 25°℃. 4.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 5.Guaranteed by design, not subject to production. 6.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25℃. www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Transfer Characteristics Output Characteristics 100 100 TJ=25℃ Pulsed Pulsed 80 80 (A) ID (A) VGS=10V,8V,6V,4V ID 60 DRAIN CURRENT DRAIN CURRENT VDS=15V VGS=3.5V 40 20 60 TJ=25℃ 40 20 VGS=3V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 0 1 (V) 2 3 4 GATE TO SOURCE VOLTAGE 5 VGS 6 (V) RDS(ON)—— VGS RDS(ON) —— ID 10 14 TJ=25℃ ID=20A Pulsed Pulsed 12 VGS= 10V (m) 6 10 RDS(ON) VGS= 4.5V 8 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 8 4 2 TJ=125℃ 6 4 TJ=25℃ 2 0 5 10 15 DRAIN CURRENT ID 0 20 0 (A) 4 2 6 8 10 GATE TO SOURCE VOLTAGE IS —— VSD VGS 12 14 (V) Threshold Voltage 100 3.0 Pulsed Pulsed (V) VTH 10 TJ=125℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 2.5 TJ=25℃ 1 2.0 1.5 1.0 0.5 0.1 1 0.2 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 0.0 25 2 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) Rev. - 2.0 Typical Characteristics Gate Charge Capacitances 10 f=1MHz Pulsed VDS=15V ID =50A (V) 10000 Coss Crss 100 10 0.1 1 DRAIN TO SOURCEVOLTAGE www.jscj-elec.com 10 8 VGS 1000 GATE TO SOURCE VOLTAGE CAPACITANCE C (pF) Ciss Pulsed 6 4 2 0 30 VDS (V) 0 10 20 30 40 50 GATE CHARGE (nC) 4 Rev. - 2.0 TO-252-2L Package Outline Dimensions D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. TO-252-2L Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 5 Rev. - 2.0 TO-252-2L Tape and Reel www.jscj-elec.com 6 Rev. - 2.0