JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
MMBT3904T
TRANSISTOR (NPN)
FEATURES
Complementary to MMBT3906T
Small Package
MARKING:
SOT–523
1N = Device code
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
200
mA
PC
Collector Power Dissipation
150
mW
Thermal Resistance From Junction To Ambient
833
℃/W
-55~+150
℃
RΘJA
Operation Junction and
Storage Temperature Range
TJ,Tstg
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA, IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICEX
VCE=30V, VEB(off)=3V
50
nA
Emitter cut-off current
IEBO
VEB=5V, IC=0
100
nA
hFE(1)
VCE=1V, IC=0.1mA
40
hFE(2)
VCE=1V, IC=1mA
70
hFE(3)
VCE=1V, IC=10mA
100
hFE(4)
VCE=1V, IC=50mA
60
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Collector-emitter saturation voltage
VBE(sat)
Transition frequency
fT
300
IC=10mA, IB=1mA
0.2
V
IC=50mA, IB=5mA
0.3
V
0.85
V
0.95
V
IC=10mA, IB=1mA
0.65
IC=50mA, IB=5mA
VCE=20V,IC=10mA, f=100MHz
300
MHz
Collector output capacitance
Cob
VCB=5V, IE=0, f=1MHz
4
pF
Base input capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
8
pF
Delay time
td
35
ns
Rise time
tr
35
ns
Storage time
ts
VCC=3V, IC=10mA, IB1= IB2=1mA
200
ns
Fall time
tf
VCC=3V, IC=10mA, IB1= IB2=1mA
50
ns
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VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
VCC=3V, VBE(off)=-0.5V IC=10mA,
IB1=1mA
1
Rev. - 2.0
Typical Characteristics
Static Characteristic
14
56uA
DC CURRENT GAIN
IC
49uA
42uA
8
o
Ta=100 C
250
hFE
(mA)
63uA
10
COLLECTOR CURRENT
VCE= 1V
COMMON
EMITTER
Ta=25℃
70uA
12
hFE —— IC
300
35uA
6
28uA
21uA
4
14uA
200
150
o
Ta=25 C
100
50
2
IB=7uA
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
COLLECTOR-EMITTER VOLTAGE
VCE
3.5
0
0.1
4.0
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
100
IC
200
(mA)
IC
400
β=10
0.8
10
VCEsat ——
VBEsat —— IC
1.0
1
COLLECTOR CURRENT
(V)
Ta=25℃
0.6
Ta=100℃
0.4
β=10
300
200
Ta=100℃
100
Ta=25℃
0.2
0.1
0
1
10
COLLECTOR CURRENT
100
IC
1
200
Pc
IC—— VBE
COLLECTOR POWER DISSIPATION
Pc (mW)
IC (mA)
o
Ta=100 C
COLLECTOR CURRENT
——
IC
200
(mA)
Ta
200
100
10
Ta=25℃
1
175
150
125
100
75
50
25
VCE=1V
0
0.4
0.5
0.6
0.7
BASE-EMITTER VOLTAGE
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100
COLLECTOR CURRENT
200
0.1
0.3
10
(mA)
0.8
0.9
1.0
0
25
50
75
AMBIENT TEMPERATURE
VBE(V)
2
100
Ta
125
150
(℃ )
Rev. - 2.0
SOT-523 Package Outline Dimensions
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 TYP.
0.900
1.100
0.400 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Max.
Min.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
0.028
0.035
0.057
0.069
0.020 TYP.
0.035
0.043
0.016 REF.
0.010
0.018
0°
8°
SOT-523 Suggested Pad Layout
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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3
Rev. - 2.0
SOT-523 Tape and Reel
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4
Rev. - 2.0
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