JMnic
Product Specification
Silicon PNP Power Transistors
2SA1264N
DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SC3181N ・2SA1264 with short pin APPLICATIONS ・Power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W ℃ ℃
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1264N
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-120
V
VCEsat VBE
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A IC=-4A ; VCE=-5V
-2.0
V
Base-emitter voltage
-1.5
V μA μA
ICBO
Collector cut-off current
VCB=-120V; IE=0
-5
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-4A ; VCE=-5V
35
fT Cob
Transition frequency
IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz
30
MHz
Output capacitance
420
pF
hFE-1 Classifications R 55-110 O 80-160
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1264N
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1264N
4
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