2N3906E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B 2N3906E EPITAXIAL PLANAR PNP TRANSISTOR FEATURES Low Leakage Current A G H 2 1 D 3 DIM A B C D E G H J : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904E. : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 J C 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 100 150 -55 150 UNIT V V V mA mA mW ESM Marking Type Name ZA 2003. 12. 12 Revision No : 0 1/4 2N3906E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage SYMBOL ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) DC Current Gain * hFE(3) hFE(4) hFE(5) Collector-Emitter Saturation Voltage * VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz Vout V in 275Ω TEST CONDITION VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz VBE=-0.5V, IC=0, f=1MHz MIN. -40 -40 -5.0 60 80 100 60 30 -0.65 250 2.0 TYP. - MAX. -50 -50 300 -0.25 -0.4 -0.85 -0.95 4.5 10 12 10 400 60 4.0 UNIT nA nA V V V V Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * V MHz pF pF k x10-4 VCE=-10V, IC=-1mA, f=1kHz 1.0 100 3.0 - dB Delay Time td 10kΩ C Total 4pF - - 35 Rise Time Switching Time Storage Time tr 0.5V -10.6V 300ns VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 35 nS Vout V in 275Ω tstg 10kΩ 1N916 or equiv. C Total 4pF - 225 Fall Time tf 9.1V -10.9V 20µs VCC =-3.0V 0 t r ,t f < 1ns, Du=2% - - 75 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2003. 12. 12 Revision No : 0 2/4 2N3906E I C - V CE -100 -1 -0.9 h FE - I C 1k -0.7 -0.6 -0.5 DC CURRENT GAIN h FE -0.8 500 300 Ta=125 C Ta=25 C Ta=-55 C COMMON EMITTER V CE =-1V COLLECTOR CURRENT I C (mA) -80 -60 100 50 30 -0.4 -40 -0.3 -0.2 -20 I B =-0.1mA COMMON EMITTER Ta=25 C 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -4 0 0 -1 -2 -3 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 COMMON EMITTER I C /I B =10 -0.1 -0.05 -0.03 Ta=1 25 C Ta=25 C Ta=-55 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) I C - V BE -200 COMMON EMITTER VCE =-1V COLLECTOR CURRENT I C (mA) -160 VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I E =10 -120 -5 -3 5C Ta=25 C Ta=-55 C -80 Ta=12 -1 -0.5 -0.3 Ta=-55 C Ta=25 C Ta=125 C -40 0 0 -0.4 -0.8 -1.2 -1.6 BASE-EMITTER VOLTAGE VBE (V) -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) 2003. 12. 12 Revision No : 0 3/4 2N3906E COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - I B -1.0 -0.8 I C =1mA I C =10mA I C =30mA I C =100mA C ob - VCB , C 50 30 CAPACITANCE C ob (pF) Cib (pF) ib - V EB f=1MHz Ta=25 C -0.6 -0.4 -0.2 10 5 3 C ib C ob 0 -0.001 COMMON EMITTER Ta=25 C 1 0.5 -0.1 -0.3 -1 -3 -10 -30 -0.01 -0.1 -1 -10 BASE CURRENT I B (mA) REVERSE VOLTAGE V CB (V) V EB (V) 2003. 12. 12 Revision No : 0 4/4