2N3906S-RTK/PS

SEMICONDUCTOR 2N3906S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES D ・Low Leakage Current 2 H A 3 G : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. 1 ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage Q P P K : Cob=4.5pF(Max.) @VCB=-5V. J C ・Low Collector Output Capacitance N : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M ・Complementary to 2N3904S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ SOT-23 Collector Power Dissipation Junction Temperature Storage Temperature Range Marking Lot No. Type Name ZA Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜) 2005. 4. 21 Revision No : 3 1/4 2N3906S ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10μA, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage * V(BR)EBO IE=-10μA, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * V * V fT Transition Frequency VCE=-20V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF Input Impedance hie 2.0 - 12 kΩ Voltage Feedback Ratio hre 1.0 - 10 x10-4 VCE=-10V, IC=-1mA, f=1kHz Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 3.0 - 60 Ω μ Noise Figure NF - - 4.0 dB VCE=-5V, IC=-0.1mA, Rg=1kΩ, f=10Hz～15.7kHz Delay Time td - - 35 Rise Time tr - - 35 Switching Time nS Storage Time tstg - - 225 Fall Time tf - - 75 * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2005. 4. 21 Revision No : 3 2/4 2N3906S 2005. 4. 21 Revision No : 3 3/4 2N3906S 2005. 4. 21 Revision No : 3 4/4