BC817A

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC807A. 2 A G H 1 L BC817A EPITAXIAL PLANAR NPN TRANSISTOR E B L 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING 50 45 5 500 -500 350 150 -55 150 0.6mm. UNIT V C N P P V V mA mA mW M K DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.9% Alumina 10 8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob TEST CONDITION VCB=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=500mA IC=500mA, IB=50mA VCE=1V, IC=500mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz MIN. 100 40 100 TYP. 5 MAX. 0.1 0.1 630 0.7 1.2 V V MHz pF UNIT A A 16:100 250 , 25:160 400 , 40:250 630 Marking MARK SPEC TYPE MARK BC817A-16 2M BC817A-25 2N BC817A-40 2P Type Name J D Lot No. 2009. 2. 19 Revision No : 2 1/2 BC817A h FE - I C COLLECTOR CURRENT IC (mA) 1000 DC CURRENT GAIN h FE 500 300 COMMON EMITTER VCE =1V Ta=100 C Ta=25 C Ta=-25 C I C - VCE 800 COMMON EMITTER Ta=25 C 600 5 4 3 2 100 50 30 400 200 I B =1mA 0 10 10 0 30 100 300 1000 0 1 2 3 4 5 6 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER I C /IB =25 I C - V BE 1000 COLLECTOR CURRENT I C (mA) 300 100 C Ta= 25 3 1 0.3 0.1 0.03 Ta=100 C 0.01 10 Ta=25 C COMMON EMITTER VCE =1V 10 3 1 0.2 Ta=-25 C 30 100 300 1000 0.4 Ta= Ta= 100 C 30 0.6 Ta=25 C 100 C 0.8 1.0 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) fT - I C COMMON EMITTER Ta=25 C VCE =5V P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 175 500 TRANSITION FREQUENCY f T (MHz) 300 100 30 10 1 3 10 30 100 300 1000 COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C) 2009. 2. 19 Revision No : 2 2/2