KMB054N40DC

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. KMB054N40DC N-Ch Trench MOSFET A C K D L B FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. H G F F J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Unless otherwise Noted) SYMBOL VDSS VGSS N-Ch 40 20 54 A 100 100 45 W 3.1 150 -55 150 2.8 40 /W /W A UNIT V V DPAK (1) DC@TC=25 Pulsed (Note1) (Note2) ID IDP IS Marking Type Name Drain-Source-Diode Forward Current Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case (Note1) (Note1) (Note2) PD Tj Tstg RthJC RthJA KMB 054N40 DC Lot No Thermal Resistance, Junction to Ambient (Note2) Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper. PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G S 2009. 10. 26 Revision No : 0 1/5 KMB054N40DC ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth VGS=0V, ID=250 A VGS=0V, VDS=32V VGS= 20V, VDS=0V 40 1.7 6.5 8.5 10.4 58 1 100 2.6 8.5 11 14 S m V A nA V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL VDS=VGS, ID=250 A VGS=10V, ID=14A Drain-Source ON Resistance RDS(ON)* VGS=4.5V, ID=11A VGS=10V, ID=14A, Tj=125 Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note>* Pulse Test : Pulse width