KMB3D9N40TA

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. G KMB3D9N40TA N-Ch Trench MOSFET E K B DIM A B 2 C 3 D FEATURES VDSS=40V, ID=3.9A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=58m (Max.) @ VGS=4.5V Super High Dense Cell Design MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 A F D 1 E F G H I J K L C L G J MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 40 20 3.9 3.1 16 0.8 1.25 W 0.8 150 -55 150 100 /W A A UNIT V V Type Name Marking DC@Ta=25 Drain Current DC@Ta=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation Ta=25 Ta=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note > *Surface Mounted on 1 1 FR4 Board, t ID IDP IS PD Tj Tstg RthJA 5sec PIN CONNECTION (TOP VIEW) D 3 3 2 1 G S 2 1 2008. 6. 10 Revision No : 0 I J H TSM Lot No. A2 1/5 KMB3D9N40TA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note > *Pulse Test : Pulse width