KMB060N40BA

SEMICONDUCTOR TECHNICAL DATA General Description KMB060N40BA N-Ch Trench MOSFET K This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. J A L B F D P E R G FEATURES VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. N H Q C O M DIM MILLIMETERS _ A 9.95 + 0.05 _ 9.2 + 0.1 B 8.00 C _ 15.3 + 0.2 D _ E 4.9 + 0.2 F Φ 1.5 _ G 2.54 + 0.05 _ 0.80 + 0.05 H _ J 1.27 + 0.10 K 4.50 L 1.30 M 6.90 1.75 N O 4.40 _ 0.05 P 0.1 + 0.15 _ Q 2.4 + 0.1 R 2.0 MIN MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Unless otherwise Noted) SYMBOL VDSS VGSS N-Ch 40 20 60 A 100 100 153 69 W 3.1 150 -55 150 1.8 40 /W /W A mJ UNIT V V D2PAK Marking DC@TC=25 Pulsed (Note1) (Note2) ID IDP IS Drain to Source Diode Forward Current Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25 @Ta=25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note1) (Note2) (Note3) (Note1) (Note2) KMB 060N40 BA Type Name EAS PD Tj Tstg RthJC RthJA Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″ of 2 oz copper. Pad Note 3) L=42.5 H, IAS=60A, VDD=20V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G 2009. 1. 14 S Revision No : 0 1/4 KMB060N40BA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source ON Resistance Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Note 4) Pulse Test : Pulse width