KMB060N60PA_08

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications E KMB060N60PA/FA N CHANNEL MOS FIELD EFFECT TRANSISTOR KMB060N60PA A O C F G B Q I K M L J D H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M FEATURES VDSS= 60V, ID= 60A Drain-Source ON Resistance : RDS(ON)=14m (Max.) @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 MOSFET MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range IDP IS PD* 25 Tj Tstg SYMBOL VDSS VGSS ID* Unless otherwise noted) RATING KMB060N60PA KMB060N60FA N N UNIT V V 1 2 3 N O 1. GATE 2. DRAIN 3. SOURCE 60 25 60 240 60 150 -55 -55 175 175 51 60* 240* P Q A A A W A F TO-220AB KMB060N60FA C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case SYMBOL RthJA RthJC 1.0 RATING KMB060N60PA KMB060N60FA UNIT /W K L M J G Note1) Pulse Test : Pulse width 10 S Duty cycle 1% *Drain Current Iimited by maximum junction temperature O B E DIM MILLIMETERS R 62.5 2.9 D /W N N H 1 2 3 Equivalent Circuit D 1. GATE 2. DRAIN 3. SOURCE Q A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 _ 13.0 + 0.5 _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 TO-220IS (1) G S 2008. 1. 4 Revision No : 4 1/7 KMB060N60PA/FA MOSFET Electrical Characteristics (Ta=25 CHARACTERISTIC Unless otherwise noted) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance BVDSS IDSS IGSS Vth RDS(ON) gFS ID=250 A, VGS=0V VDS=60V, VGS=0V, VGS= 15V, VDS=0V VDS=VGS, ID=250 A VGS=10V, ID=30A VDS=15V, ID=30A 60 2.0 11.5 20 1 100 4.0 14 V A nA V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Note 1) Pulse Test : Pulse width 10 s, Duty Cycle Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf 1%. VDD= 30V, ID=30A, RG= 25 VDS= 48V, VGS= 4.5V, ID=30A (Note1,2) VDS=25V, VGS=0V, f=1.0MHz 2000 360 125 70 15 20 35 220 55 30 ns nC pF Note 2) Essentially Independent of Operating Temperature. DIODE Electrical Characteristics (Ta=25 CHARACTERISTIC Diode Forward Voltage Reverse Recovery Time Unless otherwise noted) SYMBOL VSD Trr TEST CONDITION ISD=60A, VGS=0V VGS=0V, IS=60A, dIF/dt=100A/ s MIN. TYP. 110 MAX. 1.5 UNIT V Marking 1 KMB 1 060N60P A 701 2 KMB 060N60F A 713 2 1 PRODUCT NAME 2 LOT NO 2008. 1. 4 Revision No : 4 2/7 KMB060N60PA/FA Fig 1. ID - VDS 180 150 120 80 40 0 0 2 4 6 8 10 Fig 2. RDS(ON) - ID Drain Source On Resistance RDS(ON) (Ω) 25 20 15 VGS=10V Common Source Tc=25 C Pulse Test VGS=5V 4V 3.5V Common Source Tc=25 C Pulse Test Drain Current ID (A) 4.5V 10 5 0 0 10 20 30 40 50 3V 2.5V Drain - Source Voltage VDS (V) Drain Current ID (A) Fig 3. ID - VGS 200 160 120 80 40 0 0 2 4 6 8 10 2.2 VGS = 10V IDS = 30A Fig 4. RDS(ON) - Tj Normalized On Resistance Drain Current ID (A) 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 150 VGS=15V Gate - Source Voltage VGS (V) Junction Temperature Tj ( C) Fig 5. Vth - Tj 1.4 1.2 1 0.8 VDS = VGS ID = 250µA Fig 6. IDR - VDSF VGS = 0 250µs Pulse Test Reverse Drain Current IS (A) Normalized On Resistance 101 150 C 100 25 C 0.6 0.4 -50 0 50 100 150 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Junction Temperature Tj ( C) Source - Drain Voltage VSD (V) 2008. 1. 4 Revision No : 4 3/7 KMB060N60PA/FA Fig 7. Qg - VDS 10 5000 Fig 8. C - VDS Gate - Source Voltage VGS (V) f = 1MHz VGS = 0V Gate - Source Voltage VGS (V) 8 6 4 2 0 0 20 40 60 80 100 4000 3000 2000 1000 Coss Ciss Crss 0 0 10 20 30 40 50 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig 9. Safe Operation Area KMB060N60PA 100µs Fig 10. Safe Operation Area KMB060N60FA 100µs Drain Current ID (A) 1ms ) (ON Drain Current ID (A) 100 Lim ited 100 Lim ited 1ms 10ms DC 10ms DC 10 R DS 10 O R DS( N) 1 1 0.1 0.1 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) 2008. 1. 4 Revision No : 4 4/7 KMB060N60PA/FA Fig 11. Rth of KMB060N60PA Transient Thermal Impedance [ C / W] 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.01 0.01 Single Pulse - Duty Factor, D= t1/t2 - RthJC = Tj(max) - Tc PD 100 101 0.003 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) Fig 12. Rth of KMB060N60FA Transient Thermal Impedance [ C / W] 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.01 0.01 - Duty Factor, D= t1/t2 Single Pulse - RthJC = 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 0.003 10-5 10-4 Square Wave Pulse Duration (sec) 2008. 1. 4 Revision No : 4 5/7 KMB060N60PA/FA - Gate Charge VGS -4.5V ID Schottky Diode 0.8 x VDSS ID 1.0 mA Q VDS VGS Qgs Qgd Qg - Resistive Load Switching RL VDS 90% 0.5 x VDSS 25Ω VDS 10V VGS VGS 10% tf td(on) ton tr td(off) toff - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.5 x VDSS 25Ω VDS 10 V ID(t) VGS VDD VDS(t) Time tp 2008. 1. 4 Revision No : 4 6/7 KMB060N60PA/FA - Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2008. 1. 4 Revision No : 4 7/7