SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. FEATURES
Including two devices in US6. (Ultra Super mini type with 6 leads) Simplify circuit design.
A1
1
KTX101U
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
B B1 6 5 4 D
C
Reduce a quantity of parts and manufacturing process.
2 3
DIM A A1 B
B1 C D G
MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1
0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05
A
C
H
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
H T G T
MARKING
Type Name
6 5 4
h FE Rank
Q1
Q2
B
1 2 3
1. 2. 3. 4. 5. 6.
Q1 Q1 Q2 Q2 Q2 Q1
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
1
2
3
US6
Q1 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
)
SYMBOL VCBO VCEO VEBO IC IB RATING 60 50 5 150 30 UNIT V V
Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
)
SYMBOL VCBO VCEO VEBO IC IB RATING -50 -50 -5 -150 -30 UNIT V V
Q1 Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Raing.
)
SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT
2002. 1. 24
Revision No : 4
1/5
KTX101U
Q1 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note)hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(SAT) fT Cob NF GR(6)200~400
)
TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 VCE=6V, IC=0.1 , f=1 , Rg=10 MIN. 120 80 TYP. 0.1 2.0 1.0 MAX. 0.1 0.1 400 0.25 3.5 10 V UNIT.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note)hFE Classification : Y(4)120~240, SYMBOL ICBO IEBO hFE (Note) VCE(SAT) fT Cob NF GR(6)200~400
)
TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.1 , f=1 , Rg=10 MIN. 120 80 TYP. -0.1 4.0 1.0 MAX. -0.1 -0.1 400 -0.3 7.0 10 V UNIT.
2002. 1. 24
Revision No : 4
2/5
KTX101U
Q 1 (NPN TRANSISTOR)
I C - VCE
240 COLLECTOR CURRENT I C (mA)
6.0 5.0 3.0 COMMON EMITTER Ta=25 C 2.0
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=100 C Ta=25 C Ta=-25 C VCE =6V COMMON EMITTER
200 160 120 80 40 0
1.0 0.5 I B =-0.2mA 0
100 50 30
VCE =1V
0
1
2
3
4
5
6
7
10 0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
COMMON EMITTER I C /I B=10
VBE(sat) - I C
10 5 3
COMMON EMITTER I C /I B=10 Ta=25 C
0.1 0.05 0.03
0 =1 Ta
0
C
1 0.5 0.3
Ta=25 C Ta=-25 C
0.01 0.1
0.3
1
3
10
30
100
300
0.1
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT IC (mA)
fT - IC
TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10
COMMON EMITTER VCE =10V Ta=25 C
I B - V BE
3k BASE CURRENT I B (µA) 1k 300 100
25 C 5C Ta=2
COMMON EMITTER VCE =6V
30 10 3 1
Ta=1
00 C
0.1
0.3
1
3
10
30
100
300
0.3
0
0.2
0.4
0.6
Ta=-
0.8
1.0
1.2
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE VBE (V)
2002. 1. 24
Revision No : 4
3/5
KTX101U
Q 2 (PNP TRANSISTOR)
I C - VCE
-240 COLLECTOR CURRENT I C (mA)
I B =-2.0mA COMMON EMITTER Ta=25 C I B =-1.5mA I B =-1.0mA
h FE - I C
3k
COMMON EMITTER
DC CURRENT GAIN h FE
-200 -160 -120 -80 -40 0
1k 500 300
Ta=100 C Ta=25 C VCE =-6V
I B =-0.5mA I B =-0.2mA I B =0mA
100 50
Ta=-25 C VCE =-1V
0
-1
-2
-3
-4
-5
-6
-7
30 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
COMMON EMITTER I C /I B =10
VBE(sat) - I C
-10 -5 -3
COMMON EMITTER I C/I B=10 Ta=25 C
-0.1 -0.05 -0.03
T
1 a=
00
C
-1 -0.5 -0.3
Ta=25 C Ta=-25 C
-0.01 -0.1
-0.3
-1
-3
-10
-30
-100
-300
-0.1 -0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
fT - IC
TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 0.1
COMMON EMITTER VCE =-10V Ta=25 C
I B - V BE
-1k BASE CURRENT IB (µA) -300 -100
Ta=2 5C Ta=-2 5C 00 C
COMMON EMITTER VCE =-6V
-30 -10 -3 -1 -0.3 0 -0.2 -0.4
0.3
1
3
10
30
100
300
Ta=1
-0.6
-0.8
-1.0
-1.2
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE VBE (V)
2002. 1. 24
Revision No : 4
4/5
KTX101U
COLLECTOR POWER DISSIPATION P C (mW)
Pc - Ta
250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C)
2002. 1. 24
Revision No : 4
5/5
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