2SD1628

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 20 6 5 8 500 1.5 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 SMD Type 2SD1628 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Storage time Turn-off time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 5 V, IC=0 VCE = 2 V , IC = 0.5 A VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz Transistors Diodes Min Typ Max 100 100 Unit nA nA 120 120 45 560 MHz pF 500 1.5 mV V V V V 30 300 40 ns ns ns VCE(sat) IC = 3 A , IB = 60 mA VBE(sat) IC = 3 A , IB = 60 mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton tstg tf 60 20 6 hFE Classification Marking Rank hFE E 120 200 DK F 160 320 G 280 560 2 www.kexin.com.cn