2SD1628G-TD-E

Ordering number : EN1781B 2SD1628 Bipolar Transistor 20V, 5A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers • Features • High hFE Low saturation voltage Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid IC’s Halogen free compliance • • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage 60 V 20 V VEBO IC ICP Collector Current Collector Current (Pulse) 6 V 5 A 8 A Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 2.5 1.0 1 2 Packing Type: TD 4.0 1.5 2SD1628G-TD-E 2SD1628G-TD-H 2SD1628F-TD-E 2SD1628F-TD-H TD Marking LOT No. 4.5 DK Top View RANK 3 0.4 0.4 0.5 1.5 3.0 Electrical Connection 2 0.75 1 1 : Base 2 : Collector 3 : Emitter Bottom View 3 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 82212 TKIM/21599TH (KT)/5277KI/3045MW, TS No.1781-1/6 2SD1628 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) mW 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Storage Time ton tstg Fall Time tf max Unit 100 nA VEB=5V, IC=0A 100 nA 120* 560* 95 120 VCB=10V, f=1MHz IC=3A, IB=60mA VCE(sat) VBE(sat) Turn-ON Time typ VCB=50V, IE=0A VCE=2V, IC=3A VCE=10V, IC=50mA fT Cob Output Capacitance min VCE=2V, IC=0.5A hFE2 Gain-Bandwidth Product Ratings Conditions MHz 45 pF 500 IC=3A, IB=60mA 1.5 30 See specified Test Circuit. mV V ns 300 ns 40 ns * : The 2SD1628 is classified by 0.5A hFE as follows : Rank hFE E 120 to 200 F 160 to 320 G 280 to 560 Switching Time Test Circuit IB1 PW=10μs D.C.=2% tr, tf ≤ 7ms OUTPUT IB2 INPUT 1Ω 200VR 5Ω 1μF+ 1μF + 50Ω VBE= --5V VCC=10V IC=10IB1= --10IB2=2A Ordering Information Package Shipping memo 2SD1628G-TD-E Device PCP 1,000pcs./reel Pb Free 2SD1628G-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SD1628F-TD-E PCP 1,000pcs./reel Pb Free 2SD1628F-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free IC -- VCE IC -- VCE A 40m 30mA 20mA 15mA 3 10mA 2 pulse 8mA mA 2.0 Collector Current, IC -- A 4 60 mA 10 mA 80m A pulse 100 Collector Current, IC -- A 5 5mA 1 1.6 6mA 1.2 4mA 0.8 2mA 0.4 IB=0 0 0 0.2 0.4 0.6 IB=0 0 0.8 Collector-to-Emitter Current, VCE -- V 1.0 ITR10003 0 0.4 0.8 1.2 1.6 Collector-to-Emitter Voltage, VCE -- V 2.0 ITR10004 No.1781-2/6 2SD1628 IC -- VBE 5 hFE -- IC 1000 VCE=2V pulse VCE=2V pulse 7 DC Current Gain, hFE Collector Current, IC -- A 5 4 3 2 3 2 100 7 5 3 1 2 0 10 0 0.4 0.8 1.2 1.6 2.0 Base-to-Emitter Voltage, VBE -- V 3 5 2 100 3 5 2 1000 Output Capacitance, Cob -- pF 5 3 2 100 7 5 3 5 f=1MHz pulse VCE=10V pulse 7 3 ITR10006 Cob -- VCB 2 100 7 5 3 2 2 10 2 10 3 5 7 2 100 3 5 Collector Current, IC -- mA 10 1.0 7 1000 ITR10007 3 5 7 2 10 3 7 100 ITR10008 Collector Dissipation, PC -- W 1.6 1.0 7 5 3 2 0.1 7 M 1.4 ou nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d( 25 0.6 No h 0m m2 ✕0 .8 eat s 0.4 ink 0.2 5 3 0.1 5 PC -- Ta 1.8 IC / IB=50 pulse 2 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Collector Current, IC -- mA f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 10 ITR10005 m m ) 0 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A 7 10 ITR10009 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR10010 ASO 10 7 Collector Current, IC -- A ICP IC 3 10 0m s s 1m s m 10 5 2 DC op era 1.0 tio 7 n 5 3 2 0.1 7 Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ITR10011 No.1781-3/6 2SD1628 Bag Packing Specification 2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H No.1781-4/6 2SD1628 Outline Drawing Land Pattern Example 2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.1781-5/6 2SD1628 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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