LNTA7002NT1G

LNTA7002NT1G S-LNTA7002NT1G Small Signal MOSFET 1. FEATURES ● Low Gate Charge for Fast Switching ● Small 1.6 X 1.6 mm Footprint ● ESD Protected Gate ● ESD Protected:2000V ● We declare that the material of product compliance with SC89 Gate RoHS requirements and Halogen Free. ● 1 S- prefix for automotive and other applications requiring 3 unique site and control change requirements; AEC-Q101 Drain qualified and PPAP capable. Source 2 2. APPLICATIONS (Top View) ● Power Management Load Switch ● Level Shift ● Portable Applications such as Cell Phones, Media Players, MARKING DIAGRAM T6 3. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LNTA7002NT1G T6 3000/Tape&Reel LNTA7002NT3G T6 10000/Tape&Reel 1 M 3 Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. 2 T6 = Specific Device Code M = Month Code 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Drain−to−Source Voltage VDSS 30 Unit V Gate−to−Source Voltage VGS ±10 V Continuous Drain Current (Note 1) ID 154 mA Power Dissipation (Note 1) PD 300 mW Pulsed Drain Current (tp ≤10 µs ) IDM 618 mA Tj,Tstg -55~+150 ISD 154 ℃ mA TL 260 ℃ Symbol Limits 416 Unit ℃/W Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 5. THERMAL CHARACTERISTICS Parameter Junction−to−Ambient – Steady State (Note 1) RθJA 1. Surface−mounted on FR4 board using 1 in sq pad size Leshan Radio Company, LTD. Rev.B Apr. 2019 1/5 LNTA7002NT1G, S-LNTA7002NT1G Small Signal MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic OFF CHARACTERISTICS Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 100μA) Min. Typ. Max. 30 - - - - 1 - - 1 - - ±25 - - ±1 - - ±1 0.5 1 1.5 - 1.4 7 - 2.3 7.5 - 80 - - 11.5 - - 10 - - 3.5 - Unit V Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = 30 V) (VGS = 0, VDS = 20 ,Tj = 85 °C) μA Gate−to−Source Leakage Current (VDS = 0 V, VGS = ±10 V) IGSS (VDS = 0 V, VGS = ±5 V) (VDS = 0 V, VGS = ±5 V ,Tj = 85 °C) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 100μA) μA V Drain−to−Source On Resistance RDS(on) (VGS = 4.5 V, ID = 154 mA) (VGS = 2.5 V, ID = 154 mA) Forward Transconductance gfs (VDS = 3 V, ID = 154 mA) CAPACITANCES Input Capacitance Ciss (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) Output Capacitance Coss (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) Reverse Transfer Capacitance Crss (VDS = 5.0 V, f = 1 MHz,VGS = 0 V) SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDS = 5.0 V,ID = 75 mA, RG = 10 Ohm Fall Time Drain−Source Diode Characteristics Diode Forward Voltage (VGS = 0 V, IS = 154 mA) td(ON) 13 tr 15 td(OFF) 98 tf 60 VSD - 0.77 Ohm mS pF pF pF ns 0.9 V 2. Pulse Test: pulse width ≤300 µs, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. Leshan Radio Company, LTD. Rev.B Apr. 2019 2/5 LNTA7002NT1G, S-LNTA7002NT1G Small Signal MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES 0.2 0.2 VGS=1.8V,2V,3V,4V,5V 0.18 Ta=25℃ 0.16 0.16 ID,Drain Current(A) VGS=1.60V 0.14 0.12 0.1 VGS=1.40V 0.08 0.14 0.12 25℃ 0.1 0.08 -55℃ 0.06 0.06 150℃ 0.04 0.04 VGS=1.20V 0.02 0.02 0 0 0 0.5 1 1.5 VDS,Drain to Source Voltage(V) 0 2 0.5 1 1.5 VGS,Gate to Source Voltage(V) ID vs. VGS ID vs. VDS 1 2.5 Ta=25℃ 2 0.1 0.01 150℃ 25℃ -55℃ 0.001 RDS(on),On Resistance (Ω) IS,Diode FOrward Current(A) ID,Drain Current(A) VDS=5V 0.18 VGS=2.5V 1.5 1 VGS=4.5V 0.5 0.0001 0 0.1 0.3 0.5 0.7 0.9 VSD,Diode Forward Voltage(V) 0 0.06 0.09 ID,Drain Current(A) 0.12 0.15 RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 0.03 Rev.B Apr. 2019 3/5 LNTA7002NT1G, S-LNTA7002NT1G Small Signal MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 2.5 1 RDS(on),On resistance (Ω) 2 VGSTH,Thresholde Voltage(V) ID=100uA VGS=2.5V,ID=150mA 1.5 1 VGS=4.5V,ID=150mA 0.5 0.9 0.8 0.7 0.6 0.5 0 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 0.4 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 VGSTH vs. Tj RDS(on) vs. Tj 45 f=1MHz Ta=25℃ 40 Ciss C-Capacitance(pF) 35 30 25 20 15 Coss 10 Crss 5 0 0 2 4 6 8 10 VDS,Drain to Source Voltage(V) Capacitance Leshan Radio Company, LTD. Rev.B Apr. 2019 4/5 LNTA7002NT1G, S-LNTA7002NT1G Small Signal MOSFET 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 1.50 NOM MAX MIN NOM MAX 1.60 1.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0.80 0.024 0.028 0.031 D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50BSC 0.020BSC H 0.53REF 0.021REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 L 1.10REF 0.02 0.043REF M --- --- 10° --- --- 10° N --- --- 10° --- --- 10° S 1.50 1.60 1.70 0.059 0.063 0.067 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Apr. 2019 5/5