NVTA7002NT1G

NTA7002N, NVTA7002N MOSFET – Single, N-Channel, Small Signal, Gate ESD Protection, SC-75 30 V, 154 mA http://onsemi.com Features • • • • • Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant RDS(on) Typ @ VGS V(BR)DSS ID MAX (Note 1) 1.4 W @ 4.5 V 30 V 154 mA 2.3 W @ 2.5 V 3 1 Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, 2 N−Channel PIN CONNECTIONS Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter SC−75 (3−Leads) Gate Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "10 V Continuous Drain Current (Note 1) Steady State = 25°C ID 154 mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW IDM 618 mA TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) ISD 154 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C 1 3 Source Pulsed Drain Current tP v 10 ms Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Junction−to−Ambient – Steady State (Note 1) 2 (Top View) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Parameter Drain Symbol Max Unit RqJA 416 °C/W MARKING DIAGRAM 3 3 2 T6 MG SC−75 / SOT−416 G CASE 463 1 2 STYLE 5 T6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2012 May, 2019 − Rev. 5 1 Publication Order Number: NTA7002N/D NTA7002N, NVTA7002N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 100 mA 30 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 20 V, T = 85 °C 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±25 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V T = 85 °C ±1.0 mA Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 100 mA 1.0 1.5 V Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 154 mA 1.4 7.0 VGS = 2.5 V, ID = 154 mA 2.3 7.5 VDS = 3 V, ID = 154 mA 80 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V ON CHARACTERISTICS (Note 2) Forward Transconductance gFS 0.5 W mS CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 5.0 V, f = 1 MHz, VGS = 0 V 11.5 20 10 15 3.5 6.0 pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 13 VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W tf ns 15 98 ns 60 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 154 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.77 0.9 V NTA7002N, NVTA7002N TYPICAL PERFORMANCE CURVES VGS = 10 V 5V 2.8 V 2.4 V 0.18 0.16 0.14 0.2 TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.2 2V 0.12 0.1 0.08 0.06 0.04 1.4 V 0.02 1.2 V 0 0 0.8 0.4 1.2 0.16 0.12 0.08 TJ = 125°C 0.04 TJ = 25°C 0 0.6 2.0 1.6 VDS = 5 V VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 2.5 VGS = 4.5 V TJ = 125°C 2 1.5 TJ = 25°C 1 TJ = −55°C 0.5 0.2 0.1 0.15 0.05 ID, DRAIN CURRENT (AMPS) 0 2.5 1.6 VGS = 2.5 V 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 ID = 0.15 A VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 TJ = 25°C 2 Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 1.2 0.8 1.6 1 1.4 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics TJ = −55°C 1.4 1.2 1 0.8 0.6 VGS = 0 V 100 TJ = 150°C 10 TJ = 125°C 0.4 0.2 0 −50 −25 0 25 50 75 100 125 150 1 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 30 NTA7002N, NVTA7002N TYPICAL PERFORMANCE CURVES 20 Ciss 1000 TJ = 25°C VDD = 5.0 V ID = 75 mA VGS = 4.5 V Crss 15 10 Ciss td(off) tf 100 tr td(on) 10 Coss 5 0 10 t, TIME (ns) C, CAPACITANCE (pF) 25 VDS = 0 V 5 VGS = 0 V 0 VGS Crss 5 10 15 1 20 VDS 1 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 0.14 100 Figure 8. Resistive Switching Time Variation vs. Gate Resistance Figure 7. Capacitance Variation 0.16 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 0.12 0.1 0.08 0.06 0.04 0.02 0 0.5 0.65 0.55 0.6 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 0.8 Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Package Shipping† NTA7002NT1G SC−75 (Pb−Free) 3000 / Tape & Reel NVTA7002NT1G SC−75 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE G 3 1 2 DATE 07 AUG 2015 SCALE 4:1 −E− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.065 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.060 0.063 0.067 MIN 0.027 0.000 0.006 0.004 0.061 0.027 GENERIC MARKING DIAGRAM* A1 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M G STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 1 XX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.508 0.020 0.787 0.031 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB15184C SC−75/SOT−416 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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