S-LBAV99LT1G

LBAV99LT1G S-LBAV99LT1G Dual Series Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV99LT1G A7 3000/Tape&Reel LBAV99LT3G A7 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Reverse Voltage VR 75 Forward Current IF IFM(surge) 215 500 V mA mA Repetitive Peak Reverse Voltage VRRM 85 V Repetitive Peak Forward Current IFRM 500 Non-Repetitive Peak Forward Current t=1μs IFSM mA A Peak Forward Surge Current 2 1 t=1ms t=1s 0.5 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Limits Unit 225 mW 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −65∼+150 ºC Symbol PD FR−4 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–4 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.E Feb. 2020 1/4 LBAV99LT1G, S-LBAV99LT1G Dual Series Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (I(BR)=100μA) Symbol VBR Min. Typ. Max. 75 - mV Forward Voltage (IF = 1.0 mA) (IF = 10 mA) VF - - 715 855 (IF = 50 mA) - - 1000 (IF = 150 mA) - - 1250 μA Reverse Voltage Leakage Current (VR = 70V) (VR = 70V,TJ = 150°C) IR (VR = 25V,TJ = 150°C) Diode Capacitance (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mA,RL =50Ω ) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) Leshan Radio Company, LTD. Unit V CD trr VFR Rev.E Feb. 2020 - - 2.5 - - 50 30 pF - - 1.5 ns - - 6.0 V - - 1.75 2/4 LBAV99LT1G, S-LBAV99LT1G Dual Series Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1.E+00 1.E-04 150℃ 1.E-05 85℃ IR,Reverse Current(A) IF,Forward Current(A) 150℃ 1.E-01 -55℃ 1.E-02 25℃ 85℃ 1.E-06 1.E-07 25℃ 1.E-03 1.E-08 -55℃ 1.E-09 1.E-04 0 0.5 0 1 VF,Forward Voltage(V) Forward Characteristics 20 40 60 80 VR,Reverse Voltage(V) 100 Reverse Characteristics 0.6 f=1.0MHz Ta=25℃ CT,Capacitor(pF) 0.55 0.5 0.45 0.4 0.35 0.3 0 10 20 30 40 VR,Reverse Voltage(V) 50 Capacitor Characteristics Leshan Radio Company, LTD. Rev.E Feb. 2020 3/4 LBAV99LT1G, S-LBAV99LT1G Dual Series Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Feb. 2020 4/4