APT6045SVFR

APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. BVFR TO -2 47 D3PAK SVFR • Faster Switching • Lower Leakage 3 • Avalanche Energy Rated D • FAST RECOVERY BODY DIODE G S • TO-247 or Surface Mount D PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT6045B_SVFR(G) UNIT Volts Amps 600 15 60 ±30 ±40 250 2.0 -55 to 150 300 15 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 960 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.45 250 1000 ±100 2 4 (VGS = 10V, ID = 7.5A) Ohms μA nA Volts 050-7204 Rev A 1-2010 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT6045B_SVFR(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 15A @ 25°C VGS = 15V VDD = 300V ID = 15A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT 2600 305 125 115 15 52 10 9 38 6 3120 425 180 170 25 75 20 18 50 12 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM SD dv /dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Reverse Recovery Time (IS = -15A, di/dt = 100A/ μs) Reverse Recovery Charge (IS = -15A, di/dt = 100A/ μs) Peak Recovery Current (IS = -15A, /dt = 100A/ μs) di 1 2 MIN TYP MAX UNIT Amps Volts V/ns ns μC Amps 15 60 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -15A) 5 V Peak Diode Recovery dv/dt t rr Q rr IRRM 250 500 1.9 6 15 26 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.50 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID14A di/dt ≤ 700A/μs VR ≤ 600V TJ ≤ 150°C Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: 0.1 0.05 050-7270 Rev A 1-2010 PDM t1 t2 0.001 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 10-3 Typical Performance Curves 30 ID, DRAIN CURRENT (AMPERES) VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 30 VGS=15V VGS=7V, 10V 6V APT6045B_SVFR(G) 24 5.5V 18 24 5.5V 18 12 5V 12 5V 6 4.5V 4V 6 4.5V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 μSEC. PULSE TEST @