CM30TF-24H

MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N u v w E N D BuN EuN BvN EvN BwN EwN S - DIA. (2 TYP.) M R F R L F R L K Q TAB #110, t = 0.5 TAB #250, t = 0.8 G P H R P (BuP) GuP EuP u (BvP) GvP EvP v (BwP) GwP EwP w Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM30TF-24H is a 1200V (VCES), 30 Ampere Six-IGBT Module. Type CM Current Rating Amperes (30) 30 VCES Volts (x 50) 24 (BuN) GuN EuN N (BvN) GvN EvN (BwN) GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 5.0 4.33±0.01 3.86 2.20 1.57 1.12 1.04 1.01 0.98 Millimeters 127.0 110.0±0.2 98.0 56.0 40.0 28.5 26.5 25.6 25.0 Dimensions K L M N P Q R S Inches 0.85 0.83 0.75 0.71 0.69 0.65 0.3 0.22 Dia. Millimeters 21.5 21.0 19.0 18.0 17.5 16.5 7.5 Dia. 5.5 Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – Viso CM30TF-24H –40 to 150 –40 to 125 1200 ±20 30 60* 30 60* 310 1.47 ~ 1.96 390 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 3mA, VCE = 10V IC = 30A, VGE = 15V IC = 30A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 30A, VGE = 15V IE = 30A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 150 – Max. 1.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 30A, diE/dt = –60A/µs IE = 30A, diE/dt = –60A/µs VCC = 600V, IC = 30A, VGE1 = VGE2 = 15V, RG = 10Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.22 Max. 6 2.1 1.2 100 200 150 350 250 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.50 1.40 0.042 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 60 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 60 15 12 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C VCE = 15V Tj = 25°C Tj = 125°C 50 40 Tj = 25°C 50 40 30 20 10 0 4 11 3 30 10 2 20 9 10 7 8 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 4 8 12 16 20 0 0 10 20 30 40 50 60 COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C 8 IC = 60A IC = 30A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (pF) 102 7 Tj = 25°C 5 3 2 101 Cies VGE = 0V 100 Coes 6 101 7 5 3 2 4 10-1 Cres 2 IC = 12A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -60A/µsec Tj = 25°C Irr trr REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 td(off) REVERSE RECOVERY TIME, t rr, (ns) 103 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 30A tf SWITCHING TIME, (ns) 16 VCC = 400V VCC = 600V 12 102 td(on) 102 100 8 VCC = 600V VGE = ±15V RG = 10Ω Tj = 125°C 4 101 100 tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 40 80 120 160 200 240 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.5°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.4°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998