CM30TF-12H

CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts A B Q R R Q R P BuP EuP BvP EvP BwP EwP J P N U BuN EuN V BvN EvN W BwN EwN L E D S - DIA. (2 TYP.) K H C H N .250 TAB .110 TAB G M F R P BuP EuP u BvP EvP v BwP EwP w Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (150ns) Free-Wheel Diode □ High Frequency Operation (15-20kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM30TF-12H is a 600V (VCES), 30 Ampere SixIGBT IGBTMOD™ Power Module. Type CM Current Rating Amperes (30) 30 VCES Volts (x 50) 12 BuN EuN N BvN EvN BwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.21 3.66± 0.01 3.19 1.77 1.18 1.04 1.01 0.85 0.83 Millimeters 107.0 93.0± 0.3 81.0 45.0 30.0 26.5 25.6 21.5 21.0 Dimensions K L M N P Q R S Inches 0.79 0.71 0.69± 0.02 0.69 0.63 0.55 0.30 0.22 Dia. Millimeters 20.0 18.0 17.5± 0.5 17.5 16.0 14.0 7.5 Dia. 5.5 303 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – VRMS CM30TF-12H –40 to 150 –40 to 125 600 ± 20 30 60* 30 60* 150 17 260 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 3mA, VCE = 10V IC = 30A, VGE = 15V IC = 30A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 300V, IC = 30A, VGS = 15V IE = 30A, VGS = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 90 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 30A, diE/dt = –60A/µs IE = 30A, diE/dt = –60A/µs VCC = 300V, IC = 30A, VGE1 = VGE2 = 15V, RG = 21Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.08 Max. 3.0 1.1 0.6 120 300 200 300 110 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.80 2.00 0.058 Units °C/W °C/W °C/W 304 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 60 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 60 50 40 30 20 10 0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 50 40 30 VGE = 20V 15 12 4 11 3 10 2 20 9 10 0 0 2 4 1 7 8 0 0 4 8 12 16 20 0 10 20 30 40 50 60 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 102 Tj = 25°C Tj = 25°C IC = 60A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 101 8 100 6 Cies IC = 30A 101 4 10-1 Coes 2 IC = 12A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-2 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 tf SWITCHING TIME, (ns) REVERSE RECOVERY TIME, t rr, (ns) 103 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 16 VCC = 200V td(off) Irr 12 VCC = 300V 102 td(on) VCC = 300V VGE = ±15V RG = 21Ω Tj = 125°C 102 t rr 100 8 tr di/dt = -60A/µsec Tj = 25°C 4 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 10-1 102 0 0 20 40 60 80 100 120 GATE CHARGE, QG, (nC) 305 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM30TF-12H Six-IGBT IGBTMOD™ H-Series Module 30 Amperes/600 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.8°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 2.0°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 306