MUN2211T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN2211T1/D Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–59 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. R1 PIN2 R2 BASE (INPUT) PIN1 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE 318D–03, STYLE 1 (SC–59) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/°C THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RθJA TJ, Tstg TL 625 – 65 to +150 260 10 °C/W °C °C Sec DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1(2) MUN2216T1(2) MUN2230T1(2) MUN2231T1(2) MUN2232T1(2) MUN2233T1(2) MUN2234T1(2) Marking 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MUN2211T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 ICBO ICEO IEBO — — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 — — nAdc nAdc mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 — 60 100 140 140 350 350 5.0 15 30 200 150 — — — — — — — — — — — — 0.25 Vdc Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 VCE(sat) VOL — — — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2211T1 SERIES ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN2230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN2215T1 MUN2216T1 MUN2233T1 Input Resistor MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2211T1/MUN2212T1/MUN2213T1 MUN2214T1 MUN2215T1/MUN2216T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 Symbol VOH Min 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 — 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 — 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 — 1.2 0.185 0.56 kΩ Resistor Ratio R1/R2 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 RθJA = 625°C/W 50 0 – 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MUN2211T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN2211T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C 75°C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C –25°C 100 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2211T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C –25°C 100 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 50 0.001 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MUN2211T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN2213T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) TA = –25°C 25°C 1000 VCE = 10 V TA = 75°C 25°C –25°C 100 1 75°C 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25°C 100 75°C 25°C TA = –25°C IC, COLLECTOR CURRENT (mA) 0.8 Cob , CAPACITANCE (pF) 10 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2211T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN2214T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = –25°C 25°C 0.1 75°C 0.01 300 250 200 150 100 50 0 VCE = 10 TA = 75°C 25°C –25°C 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 25°C TA = –25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MUN2211T1 SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source 8 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2211T1 SERIES MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.098–0.118 2.5–3.0 0.094 2.4 0.039 1.0 0.031 0.8 inches mm SC–59 POWER DISSIPATION The power dissipation of the SC–59 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA . Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) – TA RθJA the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 200 milliwatts. PD = 150°C – 25°C = 200 milliwatts 625°C/W The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into The 625° C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 200 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, a power dissipation of 400 milliwatts can be achieved using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • The soldering temperature and time should not exceed • When shifting from preheating to soldering, the • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. maximum temperature gradient should be 5°C or less. 260°C for more than 10 seconds. Motorola Small–Signal Transistors, FETs and Diodes Device Data 9 MUN2211T1 SERIES SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the SC–59 package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C STEP 4 STEP 5 STEP 6 STEP 7 HEATING HEATING VENT COOLING ZONES 3 & 6 ZONES 4 & 7 205° TO 219°C “SOAK” “SPIKE” PEAK AT 170°C SOLDER JOINT 160°C 150°C 100°C 100°C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C 140°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 25. Typical Solder Heating Profile 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN2211T1 SERIES PACKAGE DIMENSIONS A L 3 2 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 S B D G C H K J STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 318D–03 ISSUE E SC–59 Motorola Small–Signal Transistors, FETs and Diodes Device Data 11 MUN2211T1 SERIES Motorola reserves the right to make changes without further notice to any products herein. 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