MUN2211T1G

MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC −59 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B • The SC−59 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc 8x = Specific Device Code* M = Date Code http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) PIN 2 BASE (INPUT) R1 R2 3 2 1 MARKING DIAGRAM 8x M SC−59 CASE 318D STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) 540 (Note 1) 370 (Note 2) 264 (Note 1) 287 (Note 2) − 55 to +150 Unit mW °C/W °C/W °C/W °C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. RqJA RqJL TJ, Tstg DEVICE MARKING INFORMATION *See specific marking information in the device marking table on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. 1 Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 11 Publication Order Number: MUN2211T1/D MUN2211T1 Series DEVICE MARKING AND RESISTOR VALUES Device MUN2211T1 MUN2211T1G MUN2212T1 MUN2212T1G MUN2213T1 MUN2213T1G MUN2214T1 MUN2214T1G MUN2215T1 (Note 3) MUN2215T1G (Note 3) MUN2216T1 (Note 3) MUN2216T1G (Note 3) MUN2230T1 (Note 3) MUN2231T1 (Note 3) MUN2232T1 (Note 3) MUN2232T1G (Note 3) MUN2233T1 (Note 3) MUN2233T1G (Note 3) MUN2234T1 (Note 3) MUN2236T1 MUN2237T1 MUN2237T1G MUN2240T1 (Note 3) MUN2241T1 (Note 3) Package SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 SC−59 SC−59 (Pb−Free) SC−59 SC−59 (Pb−Free) SC−59 SC−59 SC−59 SC−59 (Pb−Free) SC−59 SC−59 Marking 8A 8A 8B 8B 8C 8C 8D 8D 8E 8E 8F 8F 8G 8H 8J 8J 8K 8K 8L 8N 8P 8P 8T 8U R1 (K) 10 10 22 22 47 47 10 10 10 10 4.7 4.7 1.0 2.2 4.7 4.7 4.7 4.7 22 100 47 47 47 100 R2 (K) 10 10 22 22 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 2.2 4.7 4.7 47 47 47 100 22 22 ∞ ∞ Shipping † 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 ICBO ICEO IEBO − − − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.2 0.1 − − nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 − 60 100 140 140 350 350 5.0 15 30 200 150 150 140 350 350 − − − − − − − − − − − − − − − − 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1 MUN2240T1 MUN2236T1 MUN2237T1 MUN2241T1 VCE(sat) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, (VCC = 5.0 V, (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) VB = 5.0 V, RL = 1.0 kW) − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MUN2211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN2230T1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN2215T1 MUN2216T1 MUN2233T1 MUN2240T1 Input Resistor MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2235T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 MUN2211T1/MUN2212T1/MUN2213T1/ MUN2236T1 MUN2214T1 MUN2215T1/MUN2216T1/MUN2240T1/ MUN2241T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 MUN2237T1 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 70 32.9 32.9 70 0.8 0.17 − 0.8 0.055 0.38 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 100 47 47 100 1.0 0.21 − 1.0 0.1 0.47 2.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 130 61.1 61.1 100 1.2 0.25 − 1.2 0.185 0.56 2.6 kW Resistor Ratio R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 − 50 RqJA = 370°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 4 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2211T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN TA = −25°C 25°C 75°C 1000 VCE = 10 V TA = 75°C 25°C −25°C 100 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25°C TA = −25°C C ob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2212T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C hFE , DC CURRENT GAIN 1000 VCE = 10 V TA = 75°C 25°C −25°C 100 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 0.01 75°C 25°C TA = −25°C C ob, CAPACITANCE (pF) 3 2 1 0 0 10 20 30 40 50 0.001 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS) VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2213T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 1000 VCE = 10 V 75°C hFE , DC CURRENT GAIN TA = 75°C 25°C −25°C 100 IC/IB = 10 TA = −25°C 25°C 1 0.1 0.01 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.8 C ob, CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 75°C 25°C TA = −25°C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V TA = −25°C 25°C 75°C V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2214T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 300 250 hFE , DC CURRENT GAIN 200 150 100 50 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75°C 25°C −25°C TA = −25°C 25°C 0.1 75°C 0.01 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2236T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = −25°C 25°C 75°C 0.1 1000 VCE = 10 V 75°C TA = −25°C 25°C 100 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40 10 0.1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 5 4.5 Cob, CAPACITANCE (pF) 4 3.5 3 2.5 2 1.5 1 0.5 0 f = 1 MHz lE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C TA = −25°C 10 25°C 1 VO = 5 V 0 5 10 15 20 25 30 Vin, INPUT VOLTAGE (VOLTS) 35 40 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 0.1 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 75°C 10 1 0.1 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 30 35 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 MUN2211T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN2237T1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN TA = −25°C 25°C 75°C 0.1 1000 VCE = 10 V 75°C TA = −25°C 25°C 100 10 0.01 0 5 15 25 10 20 30 IC, COLLECTOR CURRENT (mA) 35 40 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 2 IC, COLLECTOR CURRENT (mA) 1.8 Cob, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25°C 0 5 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 100 10 1 0.1 0.01 75°C TA = −25°C 25°C VO = 5 V 0 2 4 6 8 10 12 Vin, INPUT VOLTAGE (VOLTS) 14 16 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 25°C 10 75°C 1 0 5 10 15 20 25 30 IC, COLLECTOR CURRENT (mA) 35 40 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 11 MUN2211T1 Series PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE F A L S 3 2 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. B D G J K DIM A B C D G H J K L S MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 C H STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCALE 10:1 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 12 MUN2211T1/D