NE960R5

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP. • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form ESD protective envelope Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575) Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14387EJ1V0DS00 (1st edition) Date Published July 1999 N CP(K) Printed in Japan © 1999 NE960R5 SERIES ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR PT Tch Tstg Ratings 15 –7 (−9 Note 1 Unit V ) V A mA mA ) W °C °C 0.7 +5.0 –5.0 5.0 (4.2 Note 2 175 –65 to +175 Notes 1. NE962R575 2. NE961R500 RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Condition MIN. − − − TYP. 9.0 − − MAX. 9.0 3.0 +130 Unit V dB °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified, using NEC standard test fixture.) Parameter Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Gate to Source Break Down Note 2 Voltage Thermal Resistance Output Power at Pin = +19 dBm Output Power at 1 dB Gain Note 1 Compression Point Power Added Efficiency at Po (1dB) Linear Gain Note 1 Note 1 Note 1 Symbol IDSS Vp BVgd BVgs Rth Pout Po (1 dB) Test Conditions VDS = 1.5 V, VGS = 0 V VDS = 2.5 V, ID = 2 mA Igd = 2 mA Igs = 2 mA Channel to Case f = 14.5 GHz, VDS = 9.0 V Rg = 1 kΩ IDset = 180 mA (RF OFF) MIN. 0.18 –2.5 15 9.0 − 25.5 − − 8.0 TYP. 0.4 –1.8 − − − 26.5 27.5 MAX. 0.7 –0.5 − − 30 (35 − − − − Note 3 Unit A V V V ) °C/W dBm dBm η add GL 30 9.0 % dB Notes 1. Except NE962R575 2. NE962R575 only 3. NE961R500 Remark DC and RF performance is 100 % testing. 2 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES TYPICAL CHARACTERISTICS (TA = +25°C) OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 30 60 20 30 15 15 f = 14.5 GHz (1 tone), VDS = 9 V, IDset = 180 mA Rg = 1 kΩ 10 5 10 15 Input Power Pin (dBm) 20 25 0 DRAIN CURRENT AND GAIN vs. INPUT POWER 300 12 Drain Current ID (mA) 250 10 200 8 150 6 100 5 10 15 Input Power Pin (dBm) 20 25 4 GATE CURRENT vs. INPUT POWER 1.5 Gate Current Ig (mA) 1.0 0.5 0.0 0.5 5 10 15 Input Power Pin (dBm) 20 25 Gain (dB) Power Added Efficiency ηadd (%) 25 45 Output Power Pout (dBm) Preliminary Data Sheet P14387EJ1V0DS00 3 NE960R5 SERIES TYPICAL S-PARAMETER [NE960R575] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 S11 ANG. (deg.) –140 –154 –160 –163 –167 –175 171 147 109 47 0 –21 –45 –53 –60 S21 ANG. (deg.) 85 68 54 42 33 18 1 –20 –51 –88 –124 –144 –172 166 150 S12 ANG. (deg.) 23 19 22 32 34 35 30 18 –4 –41 –82 –141 128 101 82 S22 ANG. (deg.) –131 –143 –149 –154 –160 –168 178 159 136 95 65 49 27 11 –2 MAG. 0.87 0.84 0.84 0.82 0.81 0.79 0.73 0.69 0.62 0.63 0.76 0.79 0.87 0.87 0.83 MAG. 4.36 2.98 2.36 2.08 1.99 1.96 2.02 2.20 2.30 2.22 1.62 1.30 0.90 0.60 0.43 MAG. 0.042 0.040 0.040 0.043 0.047 0.055 0.066 0.076 0.083 0.063 0.032 0.017 0.022 0.034 0.037 MAG. 0.23 0.25 0.30 0.32 0.34 0.36 0.36 0.37 0.38 0.45 0.57 0.61 0.66 0.73 0.75 START 2 GHz, STOP 16 GHz, STEP 1 GHz S11 1.0 0.5 2.0 +135° 16 GHz 0.5 1.0 2.0 ∞ ±180° 2 GHz 0° S12 +90° +45° 0 2 GHz 16 GHz –0.5 –1.0 Rmax. = 1 S21 +90° +135° 2 GHz +45° 0.5 –2.0 –135° –90° S22 1.0 2.0 –45° Rmax. = 0.1 ±180° 16 GHz 0° 0 0.5 1.0 2 GHz 2.0 16 GHz ∞ –135° –90° –45° Rmax. = 5 –0.5 –1.0 –2.0 Rmax. = 1 4 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES [NE960R500] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 ANG. (deg.) −132 −146 −155 −158 −161 −162 −163 −165 −170 −174 179 172 172 170 167 167 163 S21 ANG. (deg.) 160 −168 −148 −121 −93 −66 −40 −11 16 43 64 86 114 152 −178 −150 −122 S12 ANG. (deg.) 90 120 155 −177 −137 −109 −64 −35 5 47 78 108 153 171 −142 −98 −80 S22 ANG. (deg.) −105 −118 −124 −131 −133 −135 −137 −138 −139 −142 −146 −149 −153 −157 −159 −164 −175 MAG. 0.87 0.85 0.85 0.86 0.86 0.85 0.84 0.85 0.86 0.86 0.85 0.85 0.87 0.86 0.87 0.87 0.87 MAG. 6.53 4.06 2.74 2.24 1.89 1.62 1.32 1.24 1.12 1.04 0.94 0.83 0.65 0.60 0.57 0.54 0.40 MAG. 0.038 0.037 0.038 0.038 0.037 0.033 0.032 0.039 0.032 0.032 0.041 0.025 0.038 0.028 0.032 0.032 0.045 MAG. 0.23 0.25 0.29 0.34 0.39 0.44 0.48 0.53 0.56 0.58 0.61 0.63 0.65 0.65 0.68 0.67 0.67 Caution S-parameters include bond wires. Gate : Total 2 wires, 1 per bond pad, 300 µm long each wire. Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire. Source : No bond wires. Wire : 25 µm diameter, gold. Preliminary Data Sheet P14387EJ1V0DS00 5 NE960R5 SERIES [NE961R500] TEST CONDITIONS: VDS = 9 V, IDset = 180 mA FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 ANG. (deg.) −134 −149 −159 −164 −168 −168 −171 −175 178 171 164 160 155 153 151 148 144 S21 ANG. (deg.) 163 −170 −151 −125 −97 −69 −43 −14 13 40 65 89 116 153 −176 −149 −114 S12 ANG. (deg.) 105 140 −176 −140 −99 −67 −18 6 49 85 113 146 −178 −161 −119 −81 −69 S22 ANG. (deg.) −90 −107 −118 −127 −132 −136 −138 −139 −139 −141 −145 −149 −156 −161 −166 −174 175 MAG. 0.81 0.79 0.78 0.79 0.78 0.77 0.76 0.76 0.76 0.77 0.77 0.79 0.81 0.81 0.81 0.80 0.81 MAG. 6.37 3.73 2.64 2.18 1.83 1.58 1.32 1.24 1.14 1.03 0.94 0.87 0.69 0.68 0.64 0.62 0.47 MAG. 0.040 0.042 0.047 0.053 0.060 0.061 0.072 0.098 0.097 0.112 0.153 0.111 0.189 0.145 0.192 0.205 0.267 MAG. 0.17 0.18 0.20 0.24 0.29 0.34 0.38 0.43 0.47 0.50 0.53 0.56 0.57 0.58 0.58 0.58 0.58 Caution S-parameters include bond wires. Gate : Total 2 wires, 1 per bond pad, 300 µm long each wire. Drain : Total 2 wires, 1 per bond pad, 300 µm long each wire. Source : Total 4 wires, 1 per bond pad, 300 µm long each wire. Wire : 25 µm diameter, gold. 6 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES PACKAGE DIMENSIONS PACKAGE CODE-75 (Unit: mm) Gate 3.0 MIN. 2.3 2.7 1.13 2.3 3.0 MIN. φ 1.8 0.5 Drain 2.7 7.0 9.8 MAX. PHYSICAL DIMENSIONS NE960R500 (CHIP) (Unit: µm) 990 223 544 223 100 100 NE961R500 (CHIP) (Unit: µm) 1000 228 544 228 100 105 Drain 0.9 MAX. Drain 570 105 85 Source G 200 90 305 Source G 200 90 310 Remark Chip thickness: 100 µm G : Gate Source is grounded through via hole. Remark Chip thickness: 140 µm G : Gate 110 85 580 Preliminary Data Sheet P14387EJ1V0DS00 7 NE960R5 SERIES RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Partial Heating Soldering Conditions Pin temperature: 260°C Time: 5 seconds or less (per pin row) Note Exposure limit: None Recommended Condition Symbol – Note After opening the dry pack, keep it in a place below 25°C and 65 % RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). CHIP HANDLING DIE ATTACHMENT Die attach can be accomplished with a Au-Sn (300 ±10°C) performs in a forming gas environment. Epoxy die attach is not recommended. BONDING Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 to 8 % elongation) 30 microns or less in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 280°C_5 minute curve. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. 8 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES [MEMO] Preliminary Data Sheet P14387EJ1V0DS00 9 NE960R5 SERIES [MEMO] 10 Preliminary Data Sheet P14387EJ1V0DS00 NE960R5 SERIES [MEMO] Preliminary Data Sheet P14387EJ1V0DS00 11 NE960R5 SERIES Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8