UPA1913TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A) RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1913TE EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –20 ±12 ±4.5 ±18 0.2 2 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Marking: TE Body Diode Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13807EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 µ PA1913 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = –20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –2.5 A VGS = –4.5 V, ID = –2.5 A VGS = –4.0 V, ID = –2.5 A VGS = –2.7 V, ID = –2.5 A VGS = –2.5 V, ID = –2.5 A VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –2.5 A VGS(on) = –4.0 V RG = 10 Ω VDD= –16 V ID = –4.5 A VGS = –4.0 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 10 A / µs –0.5 3 –1.1 8.8 44 46 60 66 700 208 100 300 528 242 698 6.0 2.1 2.8 0.86 32 2.2 55 58 82 90 MIN. TYP. MAX. –10 ±10 –1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC • • Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG VDD ID ( − ) VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID Wave Form VGS (−) VGS Wave Form IG = −2 mA VGS(on) 90 % RL VDD 0 10 % PG. 90 % 90 % 50 Ω ID 0 10 % 10 % td(on) ton tr td(off) toff tf 2 Data Sheet D13807EJ2V0DS00 µ PA1913 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA −100 d ite V) im 4.5 ID (pulse) PW PW ID - Drain Current - A dT - Derating Factor - % −10 V (@ )L on = S( RD GS − PW =1 0 =1 ms ID (DC) PW ms 60 −1 =1 00 ms =5 s 40 20 −0.1 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 −0.01 −0.1 Single Pulse Mounted on 250 mm2x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board −1 −10 −100 VDS - Drain to Source Voltage - V • −20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = −10 V −4.5 V −4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS −100 −10 −1 −0.1 −0.01 −0.001 TA = 125˚C 75˚C 25˚C −25˚C VDS = −10 V ID - Drain Current - A −16 −12 −2.5 V −8 −4 −0.0001 −0.00001 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 0 0.0 −0.2 −0.4 −0.6 −0.8 −1.0 VDS - Drain to Source Voltage - V VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S • VGS(off) - Gate to Source Cut-off Voltage - V −1.5 VDS = −10 V ID = −1 mA GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = −10V 10 TA = −25˚C 25˚C 75˚C 125˚C −1.0 1 0.1 −0.5 −50 0 50 100 150 0.01 −0.01 −0.1 −1 ID - Drain Current - A −10 −100 Tch - Channel Temperature - ˚C Data Sheet D13807EJ2V0DS00 3 µ PA1913 RDS(on) - Drain to Source On-State Resistance - mΩ 100 RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.5 V TA = 125˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.7 V 80 75˚C 25˚C 80 TA = 125˚C 75˚C 25˚C 60 −25˚C 60 −25˚C 40 −0.01 40 −0.01 −0.1 −1 −10 −100 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = −4.0 V TA = 125˚C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 VGS = −4.5 V RDS(on) - Drain to Source On-State Resistance - mΩ 60 RDS(on) - Drain to Source On-State Resistance - mΩ 60 TA = 125˚C 75˚C 75˚C 50 25˚C 50 25˚C 40 −25˚C 40 −25˚C 30 −0.01 −0.1 −1 −10 −100 30 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ 100 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = −2.5 A VGS = −2.5 V 80 −4.0 V 60 −4.5 V 40 −2.7 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 ID = −2.5 A 100 80 60 40 20 0 20 −50 Tch 0 50 100 - Channel Temperature -˚C 150 −2 −4 −6 −8 −10 −12 VGS - Gate to Source Voltage - V 4 Data Sheet D13807EJ2V0DS00 µ PA1913 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 10000 td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF f = 1 MHz VGS = 0V 1000 Ciss 1000 tf tr td(on) td(off) 100 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω −1 ID - Drain Current - A −10 100 Coss Crss 10 −0.1 −1 −10 −100 10 −0.1 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS −8 IF - Source to Drain Current - A VGS - Gate to Source Voltage - V 100 ID = −4.5 A VDD = −16 V −10 V 10 −6 1 −4 0.1 −2 0.01 0.4 0 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VF(S-D) - Source to Drain Voltage - V QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Without Board 100 Mounted on 250 mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 PW - Pulse Width - S 10 100 1000 Data Sheet D13807EJ2V0DS00 5 µ PA1913 [MEMO] 6 Data Sheet D13807EJ2V0DS00 µ PA1913 [MEMO] Data Sheet D13807EJ2V0DS00 7 µ PA1913 • The information in this document is subject to change without notice. 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