UPA1918TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 FEATURES • 4.0 V drive available • Low on-state resistance RDS(on)1 = 143 mΩ MAX. (VGS = –10 V, ID = –2.0 A) RDS(on)2 = 179 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)3 = 190 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A) 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1918TE Marking: TS ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT –60 m20 m3.5 m14 0.2 2.0 150 –55 to +150 V V A A W W °C °C Gate Protection Diode Gate Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Note2 Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15926EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 µ PA1918 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = –48 V VGS = –10 V ID = –3.5 A IF = 3.5 A, VGS = 0 V TEST CONDITIONS VDS = –60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = –10 V, ID = –1.0 mA VDS = –10 V, ID = –2.0 A VGS = –10 V, ID = –2.0 A VGS = –4.5 V, ID = –2.0 A VGS = –4.0 V, ID = –2.0 A VDS = –10 V VGS = 0 V f = 1.0 MHz VDD = –30 V, ID = –2.0 A VGS = –10 V RG = 10 Ω –1.5 3.0 –1.9 6.2 114 134 142 666 120 58 12 5 58 27 12 1.5 3.5 0.87 143 179 190 MIN. TYP. MAX. –1.0 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V m10 –2.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(−) 0 10% VGS 90% IG = −2 mA 50 Ω RL VDD VDD PG. 90% VDS(−) 90% 10% 10% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15926EJ1V0DS µ PA1918 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 2.25 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - °C -100 R DS(on) Limited (VGS = − 10 V) ID - Drain Current - A PW = 100 µs ID (pulse) 1 ms -10 -1 ID(DC) 10 ms 100 ms 5s -0.1 Single Pulse Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm -1 -10 -100 -0.01 -0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 Single Pulse W ithout board 100 10 Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15926EJ1V0DS 3 µ PA1918 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -15 Pulsed ID - Drain Current - A -100 VGS = −10 V ID - Drain Current - A -12 −4.5 V −4.0 V -6 -10 -1 -0.1 -0.01 -0.001 -0.0001 V DS = − 10 V Pulsed T A = 1 25°C 75°C 25°C − 25°C -9 -3 0 0 -0.5 -1 -1.5 -2 VDS - Drain to Source Voltage - V 0 -1 -2 -3 -4 -5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -2.4 VGS(off) - Gate Cut-off Voltage - V 100 VDS = − 10 V Pulsed 10 T A = − 25°C 25°C 75°C 125°C VDS = −10 V ID = −1.0 mA -2 1 -1.6 0.1 -1.2 -50 0 50 100 150 Tch - Channel Temperature - °C 0.01 -0.01 -0.1 -1 -10 -100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 300 VGS = −10 V Pulsed 250 TA = 125°C 200 75°C 150 25°C 100 −25°C 50 -0.01 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = −4.5 V Pulsed TA = 125°C 250 200 75°C 25°C −25°C 150 100 -0.1 -1 -10 -100 50 -0.01 -0.1 -1 -10 -100 ID - Drain Current - A ID - Drain Current - A Data Sheet G15926EJ1V0DS 4 µ PA1918 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 VGS = −4.0 V Pulsed 250 75°C 200 25°C 150 −25°C 100 TA = 125°C 250 Pulsed 200 150 ID = −2.0 A 100 50 -0.01 50 0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V -0.1 -1 -10 -100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 250 Ciss, Coss, Crss - Capacitance - pF 10000 ID = −2.0 A Pulsed V GS = 0 V f = 1.0 MHz 200 VGS = −4.0 V 1000 C iss 150 −4.5 V 100 −10 V 100 C rss C oss 50 -50 0 50 100 150 Tch - Channel Temperature - °C 10 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = − 30 V VGS = − 10 V RG = 10 Ω 100 td(off) tf 10 td(on) tr -12 ID = −3.5 A -10 -8 -6 -4 -2 0 VDD = −48 V −30 V −15 V 1 -0.01 -0.1 -1 -10 0 3 6 9 12 15 ID - Drain Current - A QG - Gate Charge - nC Data Sheet G15926EJ1V0DS 5 µ PA1918 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed IF - Diode Forward Current - A 10 1 VGS = 0 V 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G15926EJ1V0DS µ PA1918 [MEMO] Data Sheet G15926EJ1V0DS 7 µ PA1918 • The information in this document is current as of June, 2002. 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