UPA1950TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1950 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1950 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 130 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 176 mΩ MAX. (VGS = –3.0 V, ID = –1.5 A) RDS(on)3 = 205 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) RDS(on)4 = 375 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A) 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 6: Drain1 1: Gate1 5: Source1 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) Note 4: Drain2 3: Gate2 2: Source2 µPA1950TE Note Marking: TM EQUIVALENT CIRCUIT Drain 1 Drain 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg –12 m8.0 m2.5 m7.0 1.15 0.57 150 –55 to +150 V V A A W W °C °C Gate 1 Gate Protection Diode Body Diode Gate 2 Gate Protection Diode Body Diode Total Power Dissipation (2unit) Total Power Dissipation (1unit) Channel Temperature Storage Temperature Source 1 Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15620EJ2V0DS00 (2nd edition) Date Published January 2002 NS CP(K) Printed in Japan © 2001 µ PA1950 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = –10 V VGS = –4.0 V ID = –2.5 A IF = 2.5 A, VGS = 0 V TEST CONDITIONS VDS = –12 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = –10 V, ID = –1.0 mA VDS = –10 V, ID = –1.5 A VGS = –4.5 V, ID = –1.5 A VGS = –3.0 V, ID = –1.5 A VGS = –2.5 V, ID = –1.5 A VGS = –1.8 V, ID = –1.0 A VDS = –10 V VGS = 0 V f = 1.0 MHz VDD = –6.0 V, ID = –1.5 A VGS = –4.0 V RG = 10 Ω –0.45 1.0 105 135 160 225 220 90 40 15 80 150 120 1.9 0.5 0.7 0.86 130 176 205 375 MIN. TYP. MAX. –10 m10 –1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(−) 0 10% VGS 90% IG = −2 mA 50 Ω RL VDD VDD PG. 90% VDS(−) 90% 10% 10% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15620EJ2V0DS µ PA1950 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA −100 Single Pulse Mounted on 250 mm x 35 µm Copper Pad Connected to Drain Electrode in 2 dT - Derating Factor - % 60 ID - Drain Current - A −10 50 mm x 50 mm x 1.6 mm FR-4 Board d ID (pulse) ite V) im ) L .5 on −4 S( ID (DC) RD GS = (V −1 PW = 1 ms 10 ms 100 ms 5 s (2 units) 40 −0.1 20 5 s (1 unit) 0 0 30 60 120 90 TA - Ambient Temperature - ˚C 150 −0.01 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −10 FORWARD TRANSFER CHARACTERISTICS −100 VDS = −10 V Pulsed VGS = −4.5 V −8 −10 ID - Drain Current - A ID - Drain Current - A −4.0 V −6 −1 −0.1 −0.01 −0.001 75˚C TA = 125˚C −2.5 V −4 25˚C −2 −1.8 V −25˚C −0.0001 0 0.0 −0.2 −0.4 −0.6 −0.8 VDS - Drain to Source Voltage - V −1.0 −0.00001 0 −0.5 −1.0 −1.5 −2.0 VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V −1.5 VDS = −10 V ID = −1 mA VDS = −10V 10 −1.0 1 TA = 125˚C 75˚C 25˚C −25˚C −0.5 0.1 0.0 −50 0 50 100 150 0.01 −0.01 −0.1 −1 ID - Drain Current - A −10 −100 Tch - Channel Temperature - ˚C Data Sheet G15620EJ2V0DS 3 µ PA1950 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = −1.8 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = −2.5 V 250 RDS(on) - Drain to Source On-state Resistance - mΩ 350 300 TA = 125˚C RDS(on) - Drain to Source On-state Resistance - mΩ 200 TA = 125˚C 75˚C 250 75˚C 25˚C 150 25˚C 200 −25˚C −0.1 −1 −10 −25˚C 100 −0.01 −0.1 −1 −10 150 −0.01 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 250 VGS = −3.0 V 200 TA = 125˚C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −4.5 V 200 150 TA = 125˚C 75˚C 25˚C 150 75˚C 25˚C −25˚C 100 100 −25˚C 50 −0.01 −0.1 −1 −10 50 −0.01 −0.1 −1 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 400 ID = −1.5 A VGS = −1.8 V ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 400 ID = −1.5 A 300 300 200 −2.5 V −3.0 V 200 100 −4.5 V 100 0 −50 Tch 0 0 −2 −4 −6 −8 0 50 100 - Channel Temperature -˚C 150 VGS - Gate to Source Voltage - V 4 Data Sheet G15620EJ2V0DS µ PA1950 1000 Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0 V td(on), tr, td(off), tf - Switchig Time - ns SWITCHING CHARACTERISTICS 1000 td(off) 100 tf tr td(on) Ciss 100 Coss Crss 10 10 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V 1 −0.1 VDD = −6.0 V VGS(on) = −4.0 V RG = 10 Ω −1.0 ID - Drain Current - A −10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 −5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS IF - Diode Forward Current - A VGS - Gate to Source Voltage - V ID = −2.5 A VDD = 10 V 6V 10 −4 −3 −2 −1 1 0.1 0.01 -0.4 -0.6 -0.8 -1.0 -1.2 0 0 0.4 VF(S-D) - Source to Drain Voltage - V 1.2 0.8 1.6 QG - Gate Charge - nC 2.0 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse rth(ch-A) - Transient Thermal Resistance - ˚C/W Mounted on FR-4 Board of 50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:0 100 PD (FET1) : PD (FET2) = 1:1 10 1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Data Sheet G15620EJ2V0DS 5 µ PA1950 [MEMO] 6 Data Sheet G15620EJ2V0DS µ PA1950 [MEMO] Data Sheet G15620EJ2V0DS 7 µ PA1950 • The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4