2N5486

2N5486 Silicon N−Channel JFET Transistor VHF/UHF Amplifier TO92 Type Package Absolute Maximum Ratings: Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse Gate−Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −25 − − V VGS = −20V, VDS = 0 − − −1.0 nA VGS = −20V, VDS = 0, TA = +100C − − −0.2 nA ID = 10nA, VDS = 15V −2 − −6 V VDS = 15V, VGS = 0 8 − 20 mA 4000 − 8000 mho VDS = 15V, VGS = 0, f = 400MHz − − 1000 mho VDS = 15V, VGS = 0, f = 1kHz − − 75 mho Re(yos) VDS = 15V, VGS = 0, f = 400MHz − − 100 mho Forward Transconductance gfs VDS = 15V, VGS = 0, f = 400MHz 2500 − − mho Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz − − 5 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz − − 1 pF Output Capacitance Coss VDS = 15V, VGS = 0, f = 1MHz − − 2 pF OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage V(BR)GSS IG = −1A, VDS = 0 IGSS VGS(off) ON Characteristics Zero−Gate−Voltage Drain Current IDSS Small Signal Characteristics Characteristics Forward Transfer Admittance Input Admittance Output Admittance Output Conductance |yfs| Re(yis) |yos| VDS = 15V, VGS = 0, f = 1kHz Electrical Characteristics Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF Common Source Power Gain Gps VDS = 15V, ID = 4mA, RG  1k f = 100MHz − − 2 dB f = 400MHz − − 4 dB VDS = 15V, ID = 4mA f = 100MHz 18 − 30 dB f = 400MHz 10 − 20 dB .135 (3.45) Min D G S .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max