2N5486

2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 2N5485 2N5486 PRODUCT SUMMARY Part Number 2N/SST5484 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486 VGS(off) (V) –0.3 to –3 –0.5 to –4 –2 to –6 V(BR)GSS Min (V) –25 –25 –25 gfs Min (mS) 3 3.5 4 IDSS Min (mA) 1 4 8 FEATURES D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz – 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz – 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 D 1 TO-236 (SOT-23 ) 3 S 2 S 2 G G 3 Top View 2N5484 2N5485 2N5486 Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 For applications information see AN102 and AN105. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-1 2N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5484 2N5485 2N5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V –35 –25 –0.3 1 –3 5 –1 –200 –25 –0.5 4 –4 10 –1 –200 –25 V –2 8 –6 20 –1 –200 nA pA V mA –0.002 –0.2 –20 0.8 Gate-Source Forward Voltagec Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 0.7 1 10 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV⁄ √Hz pF mS mS High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs(RE) Yos(RE) Yis(RE) VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Common-Source Power Gain Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 mS 75 100 100 2.5 3 3.5 mS mS VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW www.vishay.com f = 100 MHz f = 400 MHz 7-2 Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST5484 SST5485 SST5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V –35 –25 –0.3 1 –3 5 –1 –200 –25 –0.5 –4 10 –1 –200 –25 V –2 8 –6 20 –1 –200 nA pA V mA 4 –0.002 –0.2 –20 0.8 Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 3.5 7 60 4 8 75 mS mS 0.7 pF 1 10 nV⁄ √Hz High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs Yos Yis VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 NH dB mS mS mS Common-Source Power Gain VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-3 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IDSS – Saturation Drain Current (mA) 10 rDS(on) – Drain-Source On-Resistance ( Ω ) gfs – Forward Transconductance (mS) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 rDS @ ID = 1 mA, VGS = 0 V 400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz gos – Output Conductance (µS) 80 16 IDSS 8 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –10 0 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) –10 0 Gate Leakage Current 100 nA 10 ID = 5 mA 1 mA 0.1 mA IG – Gate Leakage 1 nA TA = 125_C gfs – Forward Transconductance (mS) 8 Common-Source Forward Transconductance vs. Drain Current VGS(off) = –3 V VDS = 10 V f = 1 kHz 10 nA 6 25_C 4 TA = –55_C 100 pA ID = 5 mA 1 mA TA = 25_C 0.1 mA IGSS @ 125_C 10 pA 125_C 2 1 pA IGSS @ 25_C 0.1 pA 0 4 8 12 16 VDG – Drain-Gate Voltage (V) 20 0 0.1 1 ID – Drain Current (mA) 10 Output Characteristics 10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) VGS = 0 V 6 –0.2 V –0.4 V 4 –0.6 V –0.8 V 2 –1.0 V –1.2 V –1.4 V 8 12 15 Output Characteristics VGS(off) = –3 V VGS = 0 V 9 –0.3 V –0.6 V 6 –0.9 V –1.2 V –1.5 V 3 –1.8 V 0 0 2 4 6 10 0 0 2 4 6 8 10 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-4 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 10 VGS(off) = –2 V 8 ID – Drain Current (mA) ID – Drain Current (mA) TA = –55_C 6 25_C VDS = 10 V 8 10 VGS(off) = –3 V TA = –55_C 25_C 6 125_C VDS = 10 V Transfer Characteristics 4 125_C 4 2 2 0 0 –0.4 –0.8 –1.2 –1.6 VGS – Gate-Source Voltage (V) –2 0 0 –0.6 –1.2 –1.8 –2.4 VGS – Gate-Source Voltage (V) –3 Transconductance vs. Gate-Source Voltage 10 VGS(off) = –2 V gfs – Forward Transconductance (mS) 8 TA = –55_C 6 25_C VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) 8 10 Transconductance vs. Gate-Source Voltage VGS(off) = –3 V VDS = 10 V f = 1 kHz TA = –55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) 0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) – Drain-Source On-Resistance ( Ω ) TA = 25_C 240 AV – Voltage Gain VGS(off) = –2 V 180 –3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID 40 VGS(off) = –2 V 60 20 –3 V 0 0.1 0 1 ID – Drain Current (mA) 10 0.1 1 ID – Drain Current (mA) 10 Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-5 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 5 Crss – Reverse Feedback Capacitance (pF) f = 1 MHz Ciss – Input Capacitance (pF) 4 3 f = 1 MHz 2.4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3 VDS = 0 V 1.8 VDS = 0 V 2 10 V 1 1.2 10 V 0.6 0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20 0 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) –20 Input Admittance 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source bis 10 gis 10 (mS) (mS) gfs –bfs 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Reverse Admittance 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source –brs bos 1 (mS) (mS) 1 –grs 0.1 0.1 gos 0.01 100 200 500 f – Frequency (MHz) 1000 0.01 100 200 500 f – Frequency (MHz) 1000 www.vishay.com 7-6 Document Number: 70246 S-04028—Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 20 Equivalent Input Noise Voltage vs. Frequency VGS(off) = –3 V VDS = 10 V 20 Output Conductance vs. Drain Current VGS(off) = –3 V VDS = 10 V f = 1 kHz Hz gos – Output Conductance (µS) 16 16 TA = –55_C 12 en – Noise Voltage nV / 12 8 8 125_C 4 25_C 4 ID = IDSS 0 10 100 1k ID = 5 mA 0 10 k 100 k 0.1 1 ID – Drain Current (mA) 10 f – Frequency (Hz) Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-7