2N5486G

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Other names and brands may be claimed as the property of others. 2N5486 JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain −Gate Voltage VDG 25 Vdc Reverse Gate −Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG(f) 10 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C TJ, Tstg −65 to +150 °C Drain Current Operating and Storage Junction Temperature Range 3 GATE 2 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−92 (TO−226AA) CASE 29−11 STYLE 5 MARKING DIAGRAM 2N 5486 AYWWG G 2N5486 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5486 2N5486G Package Shipping TO−92 1000 Units / Bulk TO−92 (Pb−Free) 1000 Units / Bulk *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 2 1 Publication Order Number: 2N5486/D 2N5486 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)GSS −25 − − Vdc IGSS − − − − −1.0 −0.2 nAdc mAdc VGS(off) −2.0 − −6.0 Vdc IDSS 8.0 − 20 mAdc ⎪yfs⎪ 4000 − 8000 mmhos Re(yis) − − 1000 mmhos ⎪yos⎪ − − 75 mmhos OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −20 Vdc, VDS = 0) (VGS = −20 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Zero−Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) SMALL− SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) − − 100 mmhos Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) 3500 − − mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 2.0 pF COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) (VDS = 15 Vdc, Tchannel = 25°C) 30 20 bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 bis @ 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 2. Reverse Transfer Admittance (yrs) 20 10 10 7.0 5.0 gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 1. Input Admittance (yis) 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.3 0.2 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 3. Forward Transadmittance (yfs) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 4. Output Admittance (yos) http://onsemi.com 2 2N5486 COMMON SOURCE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 340° 330° 320° 40° 310° 50° 20° 10° 310° 900 500 ID = IDSS 800 60° 300° 400 500 0.7 600 0.6 290° 400 80° 280° 900 300° 0.1 500 70° 290° 0.2 700 600 700 800 700 800 90° 320° ID = IDSS, 0.25 IDSS 600 80° 330° 0.4 300 70° 340° 0.3 400 50° 0.8 350° 300 200 60° 0° 200 100 0.9 30° ID = 0.25 IDSS 100 300 280° 0.0 200 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° 170° Figure 5. S11s 30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 80° 90° 700 110° 0.4 800 600 100° 210° 0° 350° 340° 330° 100 200 I = 0.25 IDSS D 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 320° 310° 300° 0.7 290° 900 700 600 200° 40° 0.5 60° 900 190° 320° 0.6 50° 800 180° Figure 6. S12s 40° 70° 270° 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280° 0.6 300 200 0.4 100 0.5 300 120° ID = IDSS 200 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° 150° Figure 7. S21s 160° 170° 180° 190° Figure 8. S22s http://onsemi.com 3 200° 210° 2N5486 COMMON GATE CHARACTERISTICS grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 10 7.0 5.0 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 0.5 0.3 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 500 700 1000 brg @ IDSS 0.2 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 9. Input Admittance (yig) 20 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 Figure 11. Forward Transfer Admittance (yfg) 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 12. Output Admittance (yog) http://onsemi.com 4 2N5486 COMMON GATE CHARACTERISTICS S−PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 330° 30° 0.7 40° 100 310° 50° 300° 60° 290° 70° 280° 80° 0° 350° 340° 330° 0.04 200 300 320° 0.03 400 100 500 200 ID = IDSS 0.4 310° 600 300 0.5 60° 70° 40° 10° ID = 0.25 IDSS 0.6 50° 320° 20° 0.02 700 400 500 300° 800 600 900 0.01 290° 700 80° 800 0.3 900 90° 90° 270° 100° ID = IDSS 110° 110° 250° 270° 500 600 100° 260° 280° 0.0 100 700 600 700 260° ID = 0.25 IDSS 250° 0.01 800 120° 120° 240° 240° 800 0.02 900 130° 130° 230° 230° 900 140° 140° 220° 150° 160° 170° 180° 190° 200° 210° 20° 10° 0° 350° 150° 160° 170° 340° 330° 30° 20° 10° 40° 320° 190° 0° 1.5 1.0 350° 300 200° 210° 340° 330° 500 200 100 700 600 800 0.9 ID = IDSS 320° 400 100 0.4 50° 180° Figure 14. S12g 0.5 40° 220° 0.04 Figure 13. S11g 30° 0.03 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60° 0.2 70° 310° ID = 0.25 IDSS 80° 0.1 900 90° 300° 0.7 290° 280° 0.6 900 150° 160° 170° 180° 190° 200° 210° 150° Figure 15. S21g 160° 170° 180° 190° Figure 16. S22g http://onsemi.com 5 200° 210° 2N5486 PACKAGE DIMENSIONS TO−92 (TO−226AA) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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