NTE645

NTE644 & NTE645 Silicon Rectifier Fast Recovery, Dual, Common Anode TO220 Type Package Description: The NTE644 and NTE645 are dual, fast recovery, common anode silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: D Low Forward Voltage D High Current Capability D Fast Switching for High Efficiency D High Surge Capacity D Glass Passivated Chip Junction Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Working Peak Reverse Voltage, VRWM NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V DC Blocking Voltage, VR NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS Reverse Voltage, VR(RMS) NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V Average Rectifier Forward Current (Rated VR, TC = +1505C), IF(AV) Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non−Repetitive Peak Surge Current, IFSM (8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 250A Operating Junction Temperature Range (Reverse Voltage Applied), TJ . . . . . . . . . . −655 to +1755C Storage Temperature Range (Reverse Voltage Applied), Tstg . . . . . . . . . . . . . . . . . . . −655 to +1755C Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Instantaneous Forward Voltage VF IF = 8A − − 1.3 V Instantaneous Reverse Current IR At Rated VR, TC = +255C − − 10 5A At Rated VR, TC = +1005C − − 250 5A Junction Capacitance CP Note 1 − 50 − pF Reverse Recovery Time NTE644 trr IF = 0.5A, IR = 1A, irr = 0.25A − − 150 ns − − 250 ns NTE645 Note 1. Measured at 1MHz and applied reverse voltage of 4V. .147 (3.75) Dia Max .110 (2.79) .185 (4.7) .054 (1.38) .392 (9.95) .245 (6.22) A .608 (15.42) Max .040 (1.02) K A K .500 (12.7) Min .100 (52.54) .018 (0.48)