BUK6510-75C

BUK6510-75C N-channel TrenchMOS FET Rev. 02 — 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control management Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 77 158 V A W Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; resistance Tj = 25 °C; see Figure 13 VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 14 Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 77 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped 122 mJ 8.9 11.1 10.4 mΩ 13 mΩ NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain mbb076 Simplified outline mb Graphic symbol D G S 123 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Package Name BUK6510-75C TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 2 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 4. Limiting values Table 4. Symbol VDS VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S EDS(AL)R Limiting values Parameter drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C ID = 77 A; Vsup ≤ 75 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped [3][4][5] In accordance with the Absolute Maximum Rating System (IEC 60134). Conditions Tj ≥ 25 °C; Tj ≤ 175 °C DC Pulsed Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 100 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 2 [1] [2] Min -16 -20 -55 -55 - Max 75 16 20 77 54 305 158 175 175 77 305 122 - Unit V V V A A A W °C °C A A mJ J Source-drain diode Avalanche ruggedness [1] [2] [3] [4] [5] -16V accumulated duration not to exceed 168 hrs. Accumulated pulse duration not to exceed 5mins. Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. Repetitive avalanche rating limited by an average junction temperature of 170 °C. Refer to application note AN10273 for further information. BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 3 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 100 ID (A) 80 003aae406 120 Pder (%) 80 03aa16 60 40 40 20 0 0 50 100 150 200 Tmb (°C) 0 0 50 100 150 Tmb (°C) 200 Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aae408 103 ID (A) 102 Limit RDSon = VDS / ID tp =10 μ s 100 μ s 10 DC 1 1 ms 10 ms 100 ms 10-1 1 10 102 V DS ( V) 103 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 4 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 5. Thermal characteristics Table 5. Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 60 Max 0.95 Unit K/W K/W thermal resistance from junction to mounting see Figure 4 base thermal resistance from junction to ambient vertical in free air 1 Zth (K/W) δ = 0.5 0.2 003aae407 10-1 0.1 0.05 0.02 tp T 10 -2 P single shot tp T δ= t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s ) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 5 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 6. Characteristics Table 6. Symbol V(BR)DSS Characteristics Parameter drain-source breakdown voltage Conditions ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 9; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 9 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11; see Figure 12 ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 9 IDSS drain leakage current VDS = 75 V; VGS = 0 V; Tj = 175 °C VDS = 75 V; VGS = 0 V; Tj = 25 °C VDS = 30 V; VGS = 0 V; Tj = 175 °C IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C VGS = -20 V; VDS = 0 V; Tj = 25 °C VGS = -15 V; VDS = 0 V; Tj = 25 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 5 V; ID = 15 A; Tj = 25 °C; see Figure 14 VGS = 4.5 V; ID = 15 A; Tj = 25 °C; see Figure 14 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 14 VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 15; see Figure 13 Dynamic characteristics QG(tot) total gate charge ID = 25 A; VDS = 60 V; VGS = 5 V; see Figure 16; see Figure 17 ID = 45 A; VDS = 15 V; VGS = 4.5 V; Tj = 25 °C; see Figure 18; see Figure 17 ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 17; see Figure 16 52 5.9 nC C Min 75 68 27 VGS(th) gate-source threshold voltage 1.8 0.5 1.1 0.8 Typ 2.3 1.5 0.02 2 2 2 8.9 11.1 11.4 10.7 10 10.1 Max 2.8 3.3 2 500 1 500 100 100 100 10.4 13 12 13 11.7 12.4 27 Unit V V V V V V V V µA µA µA nA nA nA mΩ mΩ mΩ mΩ mΩ mΩ mΩ Static characteristics - 81 - nC BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 6 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET Table 6. Symbol QGS QGD Ciss Coss Crss td(on) tr td(off) tf LD LS Characteristics …continued Parameter gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance from drain lead 6 mm from package to centre of die ; Tj = 25 °C from source lead to source bond pad ; Tj = 25 °C IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 19 IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V VDS = 55 V; RL = 2.2 Ω; VGS = 10 V; RG(ext) = 10 Ω Conditions ID = 25 A; VDS = 60 V; VGS = 10 V; see Figure 16; see Figure 17 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 20 Min Typ 11 30 3938 310 206 18 40 165 80 4.5 7.5 Max 5251 372 282 Unit nC nC pF pF pF ns ns ns ns nH nH Source-drain diode VSD trr Qr source-drain voltage reverse recovery time recovered charge 0.8 50.5 105 1.2 V ns nC 150 ID (A) 125 003aae409 VGS ( V) =106.0 5.0 4.5 50 RDSon (mΩ) 40 003aae415 100 4.0 75 3.8 50 3.6 25 3.4 3.3 3.2 0 1 2 3 VDS( V) 4 10 20 30 0 0 0 4 8 12 16 20 VGS ( V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 7 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 120 gfs (S) 100 003aae411 120 ID (A) 100 003aae410 80 80 60 60 Tj = 175 °C Tj = 25 °C 40 40 20 20 0 0 20 40 60 80 I D (A) 100 0 0 1 2 3 4 VGS ( V) 5 Fig 7. Forward transconductance as a function of drain current; typical values 4 003aad805 Fig 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad806 VGS(th) (V) 3 max 10-1 ID (A) 10-2 min typ max typ 2 min 10-3 10-4 1 10-5 0 -60 10-6 0 60 120 Tj (°C) 180 0 1 2 3 VGS (V) 4 Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 8 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 3 VGS (th) (V) 2 max 003a a c337 10-1 ID (A) 10-2 min 10-3 typ 003aab271 max typ min 1 10-5 10-4 0 -60 10-6 0 60 120 Tj (°C) 180 0 1 2 VGS (V) 3 Fig 11. Gate-source threshold voltage as a function of junction temperature 30 RDSon (mΩ) 25 VGS ( V) = 3.8 4.0 003aae413 Fig 12. Sub-threshold drain current as a function of gate-source voltage 40 RDSon (mΩ) 30 3.0 3.2 3.4 003aaf017 VGS (V) = 3.5 3.6 20 15 10 4.5 5.0 6.0 10 20 3.8 4.0 4.5 10.0 10 5 0 0 25 50 75 100 I D (A) 125 0 0 20 40 ID (A) 60 Fig 13. Drain-source on-state resistance as a function of drain current; typical values Fig 14. Drain-source on-state resistance as a function of drain current; typical values BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 9 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 3 a 2.5 003aad804 10 VGS (V) 8 003aae414 2 6 14V VDS = 60V 1.5 4 1 2 0.5 0 -60 0 0 60 120 Tj (°C) 180 0 20 40 60 80 100 QG (nC) Fig 15. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 16. Gate-source voltage as a function of gate charge; typical values 10 003aaf019 VDS ID VGS(pl) VGS (V) 8 15V 6 VGS(th) VGS QGS1 QGS2 QGD QG(tot) 003aaa508 VDS = 6V 24V 4 QGS 2 0 0 10 20 30 Q (nC) 40 G Fig 17. Gate charge waveform definitions Fig 18. Gate-source voltage as a function of gate charge; typical values BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 10 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 200 IS (A) 150 003aae416 100 Tj = 175 °C Tj = 25 °C 50 0 0 0.5 1 1.5 VSD ( V) 2 Fig 19. Source current as a function of source-drain voltage; typical values 104 003aae412 C (pF) Ciss 103 Coss Crss 102 10-1 1 10 102 VDS ( V) Fig 20. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 11 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78A REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 03-01-22 05-03-14 Fig 21. Package outline SOT78A (TO-220AB) BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 12 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 8. Revision history Table 7. Revision history Release date 20101213 Data sheet status Product data sheet Change notice Supersedes BUK6510-75C v.1 Document ID BUK6510-75C v.2 Modifications: BUK6510-75C v.1 • • Status changed from objective to product. Various changes to content. Objective data sheet - 20100701 BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 13 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 9. Legal information 9.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual © NXP B.V. 2010. All rights reserved. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BUK6510-75C All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 02 — 13 December 2010 14 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BUK6510-75C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 13 December 2010 15 of 16 NXP Semiconductors BUK6510-75C N-channel TrenchMOS FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 December 2010 Document identifier: BUK6510-75C